Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers

Chen, X.Y.; Gu, Yan; Zhang, Yanguang; Ma, Yunyun; Du, Binyang; Zhang, J.; Ji, Wenliang; Shi, Yue; Zhu, Yingchun

doi:10.1016/j.jcrysgro.2018.02.016

Cited by 9 publications

(7 citation statements)

References 17 publications

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“…The cross-hatched patterns are periodic undulations of surface morphology typical of lattice-mismatched heteroepitaxy. Such striations derive from an inhomogeneous strain relaxation process caused by interfacial misfit dislocations buried in the buffer layer [5,15,18,26]. For all samples, we find a similar two-dimensional root mean square (RMS) roughness of the sample surface, with a value of (3.2 ± 1) nm.…”

Section: Resultsmentioning

confidence: 66%

Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells

Arif,

Canal,

Ferrari

et al. 2024

Nanomaterials

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InAs quantum wells (QWs) are promising material systems due to their small effective mass, narrow bandgap, strong spin–orbit coupling, large g-factor, and transparent interface to superconductors. Therefore, they are promising candidates for the implementation of topological superconducting states. Despite this potential, the growth of InAs QWs with high crystal quality and well-controlled morphology remains challenging. Adding an overshoot layer at the end of the metamorphic buffer layer, i.e., a layer with a slightly larger lattice constant than the active region of the device, helps to overcome the residual strain and provides optimally relaxed lattice parameters for the QW. In this work, we systematically investigated the influence of overshoot layer thickness on the morphological, structural, strain, and transport properties of undoped InAs QWs on GaAs(100) substrates. Transmission electron microscopy reveals that the metamorphic buffer layer, which includes the overshoot layer, provides a misfit dislocation-free InAs QW active region. Moreover, the residual strain in the active region is compressive in the sample with a 200 nm-thick overshoot layer but tensile in samples with an overshoot layer thicker than 200 nm, and it saturates to a constant value for overshoot layer thicknesses above 350 nm. We found that electron mobility does not depend on the crystallographic directions. A maximum electron mobility of 6.07 × 105 cm2/Vs at 2.6 K with a carrier concentration of 2.31 × 1011 cm−2 in the sample with a 400 nm-thick overshoot layer has been obtained.

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Section: Resultsmentioning

confidence: 66%

Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells

Arif,

Canal,

Ferrari

et al. 2024

Nanomaterials

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“…However, the lattice mismatch increases about 4% more for the InGaAs with the same indium content, which can further depredate the performance of the device. The work on In x Ga 1−x As PDs and FPAs of x > 0.53 on GaAs substrate are still done recently by using MBE and MOVPE, including our work [84][85][86][87] and those of other groups. [88,89] The main purpose is to gain the knowledge of higher lattice mismatch.…”

Section: Wavelength-extended Ingaas Pds and Fpasmentioning

confidence: 99%

Short-wave infrared InGaAs photodetectors and focal plane arrays

et al. 2018

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In this article, unique spectral features of short-wave infrared band of 1 µm-3 µm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

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“…A high crystal quality was obtained due to these buffers, which improved the electrical performance of InGaAs based photodetectors working in the SWIR spectral range. As for the research on improving the growth conditions to improve the crystalline quality of high-In component InGaAs epi-layers, structural and optical properties as well as further growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As materials have been investigated [ 18 ].…”

Section: Introductionmentioning

confidence: 99%

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

et al. 2023

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Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb substrates and InP substrates are demonstrated. The devices have a pBn structure that employs an AlGaAsSb thin layer as the electron barrier to suppress dark current density. The strain effect on the electrical performance of the devices was specifically studied through the growth of the pBn structure on different substrates, e.g., InP and GaSb, via a specific buffering technique to optimize material properties and minimize dark current. A lower device dark current density, down to 1 × 10−2 A/cm2 at room temperature (295 K), was achieved for the devices grown on the GaSb substrate compared to that of the devices on the InP substrate (8.6 × 10−2 A/cm2). The improved properties of the high-In component InGaAs layer and the AlGaAsSb electron barrier give rise to the low dark current of the photodetector device.

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Growth temperature optimization of GaAs-based In 0.83 Ga 0.17 As on In x Al 1 − x As buffers

Cited by 9 publications

References 17 publications

Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells

Influence of an Overshoot Layer on the Morphological, Structural, Strain, and Transport Properties of InAs Quantum Wells

Short-wave infrared InGaAs photodetectors and focal plane arrays

Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors

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