&gt;3W diffraction-limited 1550 nm diode laser amplifiers for LIDAR

Leisher, Paul O.; Campbell, Jenna; Labrecque, Michelle; McClune, Kevin; Cooper, Trevor M.; Burke, Elliot; Talantov, Fedor; Renner, Daniel; Johansson, Leif; Mashanovitch, Milan

doi:10.1117/12.2611181

Cited by 8 publications

(4 citation statements)

References 5 publications

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“…Fabricated using standard i-line lithography with micron-level precision, high power, wide-gain bandwidth, and linewidth broadening as low as 1.15× were achieved. In 2022, Leisher's research group reported a diffraction-limited 1550 nm tapered SOA [40]. The device realized a new record of over 3.0 W saturation output power, with a diffraction-limited beam quality (M2~1.2) nearly at the maximum current of 12 A.…”

Section: High Powermentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: High Powermentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…[71] Similarly, P. O. Leisher et al proposed a high beam quality (M 2 ≈1.2) and a high output power (>3 W) tapered diode laser emitting at 1550 nm, the excellent optical performance is suitable for FMCW automotive LiDAR applications. [72]…”

Section: Challengesmentioning

confidence: 99%

“…Recently, several teams have started to develop the integration of PCSELs and LiDAR-related modules. Y. H. Hong et al first switching speed -fully integrated GaN driver [81] GaN HEMT driving circuit [97] hetero integration [65] circuit design [83] high power triple junction laser [68] tapered ridge waveguide lasers with highly asymmetric design [71] tapered diode laser amplifiers [72] multi-junction VCSEL [64] flip-chip design [73] shallow surface gratings [74][75][76] driver and circuit design [82] square-lattice structure [ 88,89,93] MOCVD regrowth [92] double-lattice structure [ 66,94,95] eye safety long wavelength [70][71][72] long-wavelength [78][79][80] buried airhole/InP photonic-crystal (PC) layer [96] chip on scale -integration [100][101][102] A composite photonic crystal structure resulting from combining both square and rectangular lattices [90] CMOS-fabricated SPAD array [98] stability -laser design with high-temperature operation [77] The photonic crystal exhibiting a flat band structure, accompanied by an additional feedback mechanism [ 103] power consumption -circuit design [83] The photonic crystal exhibiting a flat band structure, accompanied by an additional feedback mechanism [ 103] suggested a framework for influencing the light emission performance of PCSELs using a GaN high electron mobility transistor (HEMT) driving circuit. For LiDAR sensing, a quicker pulse repetition frequency paired with a narrower pulse wid...…”

Section: Photonic Crystal Surface Emitting Lasermentioning

confidence: 99%

Recent Advances in Light Detection and Ranging: Optical Modulation Solutions and Novel Nanotechnologies

Chen,

Miao,

Hong

et al. 2023

Adv Quantum Tech

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Light detection and ranging (LiDAR) sensor is widely recognized as a critical component for accurate perception. However, there are a host of challenges that impede their performance, including low spatial resolution, high costs, large size, low reliability, and susceptibility to interference. It is challenging to overcome these issues using a single LiDAR module, necessitating the need for a review of current LiDAR technologies. The paper commences by introducing the fundamental principles of various laser rangefinders and discussing the optical modulation technologies used to prevent interference and ghost images. Next, the paper delves into the latest developments in laser technology, with a focus on enhancing the switching rate, compliance with eye safety regulations, miniaturization, and improving stability. One highly promising innovation is the photonic crystal surface emitting laser (PCSEL), a novel light source that boasts high‐speed, small divergence angles, and high‐power output. Finally, the paper discusses the advancements made in non‐solid‐state scanning and solid‐state scanning, such as improving stability, increasing scanning angles, and optimizing the manufacturing of mechanical and micro‐electromechanical systems (MEMS). Additionally, the paper highlights the recent advancements in nanotechnology, specifically metasurface technology, which offers superior capabilities such as beam deflection, enhanced field‐of‐view (FOV), and dynamic modulation.

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“…A tapered diode laser consists of a power-amplified tapered section and a narrow-ridged section, in which the latter restricts the lateral mode number, and the former are utilized to amplify the output power [1]. Tapered diode lasers with high power laser output at large tapered angles of 4 to 6 degrees have been reported [2][3][4]. Different attempts have been proposed to reduce the vertical far-field divergence such as super large optical cavity (SLOC) [5] and photonic band crystal (PBC) structures [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Low divergence tapered laser diode with integrated metalens

Gong

Wang²,

Zhang³

et al. 2022

Optical Design and Testing XII

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High power and high beam quality laser sources are required in numerous applications such as nonlinear frequency conversion, optical pumping of solid-state and fiber lasers, material processing, and others. Here, we theoretically study and demonstrate a tapered laser diode with integrated metalens, which can greatly reduce the lateral far-field divergence of the device. A 980 nm tapered laser diode adopted in this design consists of a power-amplified tapered section and a narrow-ridged section, in which the latter restricts the lateral mode number, and the former is utilized to amplify the output power. The wavefront is carefully reshaped by preparing a one-dimensional (1D) trench metalens near the front facet of the tapered cavity. By precisely designing the length and width of the low refractive index elements at different positions, the approximate spherical wave formed by diffraction in the tapered cavity is transformed into an output plane wave while ensuring high transmittance (>90%), which reduces the divergence of the lateral far-field. The simulation results show that the lateral far-field divergence of the fundamental mode decreases from 3.2° to 2.0° (FWHM) after the integration of the metalens with a 500 μm length of tapered cavity.

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>3W diffraction-limited 1550 nm diode laser amplifiers for LIDAR

Cited by 8 publications

References 5 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Recent Advances in Light Detection and Ranging: Optical Modulation Solutions and Novel Nanotechnologies

Low divergence tapered laser diode with integrated metalens

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