Guard ring design for high voltage operation of silicon detectors

Evensen, L.; Hanneborg, A.; Avset, B.S.; Nese, Martin

doi:10.1016/0168-9002(93)91136-b

Cited by 77 publications

(23 citation statements)

References 9 publications

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“…The nominal neutron fluence was 10 14 n=cm 2 , achieved in an irradiation time of only a few minutes at room temperature. The neutron energy spectrum was peaked at 2Me V. Three weeks after irradiation we performed the first set of measurements.…”

Section: Neutron Irradiationmentioning

confidence: 99%

Radiation effects on breakdown characteristics of multiguarded devices

Rold

Paccagnella

et al. 1997

IEEE Trans. Nucl. Sci.

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Multiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p + and/or n + floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. Device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the optimisation of the design takes into account the radiation effects.Presented at the IEEE Nuclear Science Symposium, Anaheim 3-9 november 1996Submitted to IEEE Trans. on Nucl. Sc. AbstractMultiguard structures are used in order to enhance the breakdown voltage of microstrip detectors. In this work we studied the electrical properties of devices designed in four different layouts on n-Si substrates, based on a central diode surrounded by various p + and/or n + floating rings. In particular we measured the main DC characteristics and we compared the experimental results with those simulated by a two-dimensional drift-diffusion computer model. Device noise was also measured for the central diode as a function of the applied voltage. We repeated all measurements after neutron and gamma irradiation, in view of the application of these devices to silicon microstrip detectors for future high energy physics experiments. For example at the LHC the level of radiation damage expected during the detector lifetime implies very high bias voltages for the detector operation. Multiguards can offer a solution, provided the optimisation of the design takes into account the radiation effects.

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Section: Neutron Irradiationmentioning

confidence: 99%

Radiation effects on breakdown characteristics of multiguarded devices

Rold

Paccagnella

et al. 1997

IEEE Trans. Nucl. Sci.

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“…humidity, moisture or surface contamination [4]. For example, it has been found that the reverse currents and breakdown voltage change drastically, sometimes hours after biasing a seemingly good detector.…”

Section: Introductionmentioning

confidence: 99%

Performance Characteristics of Semi-Insulator- and Dielectric-Passivated Si Strip Detectors

Ranjan

Bhardwaj

Namrata

et al. 2002

phys. stat. sol. (a)

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The harsh radiation environment in present and future high-energy physics experiments, such as the Large Hadron Collider (LHC), is a driving force for the development of high-voltage Si strip detectors. It is well known that mobile surface ions can affect the stability and long-term behaviour of Si detectors. These instabilities can be nearly eliminated and the performance of Si detectors can be improved by implementing suitably passivated metal-overhang structures. This paper presents the influence of the relative permittivity of the passivant on the breakdown performance of the Si detectors using computer simulations. The semi-insulator and the dielectric-passivated metal-overhang structures are compared under optimal conditions. Influence of the salient design parameters such as field oxide thickness, junction depth, metal-overhang width, and the surface charge on the breakdown performance of these structures are systematically analyzed, thus providing a comprehensive picture of the behaviour of metal-overhang structures and helping in the detector optimization task. The results presented in this paper clearly demonstrate the superiority of the metal-overhang structure design employing semi-insulator-passivated structures over dielectric-passivated ones in realizing a given breakdown voltage.

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“…Each ring has a p-implant 10 µm wide and the pitch increases from 20 µm for the innermost ring to 50 µm near the edge of the detector. In addition there is a metal field plate that overhangs the p-implant and extends inwards by half the gap width towards the active area [15].…”

Section: Device Structuresmentioning

confidence: 99%