Guided VLS Growth of Epitaxial Lateral Si Nanowires

Rathi, Somilkumar J.; Smith, David J.; Drucker, Jeffery

doi:10.1021/nl401962q

Cited by 26 publications

(28 citation statements)

References 24 publications

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“…32 The preferential movement direction in our experiments might possibly be determined by inhomogeneities on the surface, such as a temperature gradient 33 or a small mis-cut angle. 34 .…”

Section: A Hut Cluster Characterizationmentioning

confidence: 99%

Ge2Pt hut clusters: A substrate for germanene

Bremen

Bampoulis

Aprojanz

et al. 2018

Journal of Applied Physics

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The formation and structure of Ge 2 Pt clusters was studied in order to understand their germanene termination layer. The Ge 2 Pt clusters are formed by depositing a few layers of Pt on a Ge(110) surface. Annealing at temperatures above 1043 K results in eutectic Ge-Pt droplets that etch grooves on the surface in the [110] direction. Upon cooling down, they solidify and decompose into a Ge 2 Pt phase and a pure Ge phase. Electron diffraction reveals that the hut-shaped clusters have their (001) plane oriented parallel to the Ge(110) surface and their (100) plane facing in the Ge[110] direction. The facets of the Ge 2 Pt hut clusters have been determined to be the {101} and {011} planes. The germanene layers which cover these facets are commensurate with the {101} and {011} facets of the Ge 2 Pt substrate.

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“…32 The preferential movement direction in our experiments might possibly be determined by inhomogeneities on the surface, such as a temperature gradient 33 or a small mis-cut angle. 34 .…”

Section: A Hut Cluster Characterizationmentioning

confidence: 99%

Ge2Pt hut clusters: A substrate for germanene

Bremen

Bampoulis

Aprojanz

et al. 2018

Journal of Applied Physics

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“…[1][2][3][4][5][6][7][8] The integration of semiconductor nanowires into device geometries 9 requires control over their morphology, dimensions, growth orientation, crystal phase and structural defects. Catalytic bottom-up approaches, such as vapor-liquid-solid (VLS) [10][11][12] , vapor-solid-solid (VSS) [13][14] , supercritical fluid-liquid-solid (SFLS) [15][16][17] techniques, are popular routes for growing high-aspect ratio one-dimensional nanostructures [18][19] , where nanowire diameters can be controlled by the dimension of the catalysts. 20 Control over nanowire diameters, in turn, facilitates regulation over their growth orientation.…”

Section: Introductionmentioning

confidence: 99%

Diameter-Controlled Germanium Nanowires with Lamellar Twinning and Polytypes

et al. 2015

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Type of publicationArticle (peer-reviewed) Link to publisher's versionhttp://pubs.acs.org/journal/cmatex http://dx.doi.org/10.1021/acs.chemmater.5b00697Access to the full text of the published version may require a subscription. are appealing for use in nanowire devices. This paper details the influence of colloidal magnetite iron oxide nanoparticle seeds to regulate the radial dimension and twin boundary formation in Ge nanowires grown through a liquid-injection chemical vapor deposition process. Control over the mean nanowire diameter, even in the sub-10 nm regime, was achieved due to the minimal expansion and aggregation of iron oxide nanoparticles during the growth process. The uncommon occurrence of heterogeneously distributed multiple layer {111} twins, directed perpendicular to the nanowire growth axis, were also observed in <111>-directed Ge nanowires, especially those synthesized from patterned hemispherical Fe3O4 nanodot catalysts. Consecutive twin planes along <111>-oriented nanowires resulted in a local phase transformation from 3C diamond cubic to hexagonal 4H allotrope. Localized polytypic crystal phase heretostructures were formed along <111>-oriented Ge nanowire using magnetite nanodot catalysts. Rights

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“…However, thus far, the reported horizontally grown NWs provide a limited array of electrical and optical properties. In particular, with respect to their optical properties, ZnO, GaN, SnO 2 , In 2 O 3 , Sn‐doped In 2 O 3 (ITO), Mg 2 SiO 4 , and TiO 2 all have bandgap energies above the visible (VIS) range while the bandgap energies of Si, GaAs NWs, InAs, and VO 2 are below it . Therefore, the bandgap energy repertoire of horizontally aligned NWs so far lacks the pivotal VIS range.…”

mentioning

confidence: 99%

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High‐Performance Blue–UV Photodetectors

et al. 2015

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In order to unleash the potential of the guided growth approach and to explore its principles and generality, it must be extended to new and interesting materials with a wider range of electrical, structural, and optical properties. Zinc selenide (ZnSe) is an important direct bandgap semiconductor with a wide 2.7 eV bandgap and a large 20 meV exciton binding energy. [ 26,27 ] It is interesting from the crystal structure standpoint due to reports of both zinc-blend (ZB) and wurtzite (WZ) NWs, and as an optoelectronic material, since it has a bandgap energy in the VIS range. [ 28,29 ] This chalcogenide holds promise for the fabrication of blue LEDs and lasers, and for diverse applications such as optical switching, photodetection, and second-harmonic generation (SHG) applications. [30][31][32][33] Here we report the guided growth of horizontal and aligned ZnSe NWs with controlled orientations on six different fl at and faceted planes of sapphire (α-Al 2 O 3 ). The concepts and realization of the guide growth are presented in Figure 1 B. Three general growth modes that dictate the reproducible alignment of the NWs were realized: a) epitaxial guided growth along specifi c lattice directions on fl at surfaces, and graphoepitaxial guided growth on nanofaceted surfaces along: b) nanosteps, and c) nanogrooves.The guided ZnSe NWs were fi rst examined with respect to their elemental composition, crystallographic orientation and growth directions. Surprisingly, some new behaviors of guided NWs were found: i) temperature-dependent directional growth of epitaxial NWs was encountered, where some growth directions were observed only at elevated temperatures while others were observed throughout the entire guided growth temperature regime; ii) crystal structure variations were observed where guided NWs on some sapphire planes presented exclusively one crystal phase, either WZ or ZB, while on other planes both ZB and WZ NWs could grow side by side.In order to examine the optoelectronic properties of the ZnSe guided NWs, we exploited the advantages of the guided growth approach and fabricated multiple photodetectors using only parallel fabrication steps. The ZnSe-based photodetectors have the lowest dark currents (below our detection limit 10 −15 A) and the best measured rise and decay times (74 ms and 0.2 s, respectively) for devices that are based on ZnSe 1D nanostructures (see Table S1, Supporting Information, for previous results). [ 31,32,[34][35][36] These results along with the simple and parallel fabrication process and the ability to control the number of NWs in a single device and thus adjust its performance, reveal the advantages of guided ZnSe NWs as building blocks for fast blue and UV-light-sensitive photodetectors.The vapor-liquid-solid (VLS) growth of guided ZnSe NWs was carried out in a two-zone tube furnace system (see the Experimental Section for details). NWs grow horizontally and aligned from the Au catalyst pattern edges or from dispersed nanoparticles. Their typical diameter varied between 10 and Single-cry...

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Guided VLS Growth of Epitaxial Lateral Si Nanowires

Cited by 26 publications

References 24 publications

Ge2Pt hut clusters: A substrate for germanene

Ge2Pt hut clusters: A substrate for germanene

Diameter-Controlled Germanium Nanowires with Lamellar Twinning and Polytypes

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High‐Performance Blue–UV Photodetectors

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