Guiding and confining light in void nanostructure

Almeida, Vilson R.; Xu, Qianfan; Barrios, Carlos Angulo; Lipson, Michal

doi:10.1364/ol.29.001209

Cited by 1,604 publications

(885 citation statements)

References 10 publications

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“…We used finite element (FEM) simulations to design the passive photonic structures. The waveguide consists of two strips of a high refractive index material (Si), separated by a subwavelength low refractive (air) slot [40]. The optical mode profile in the slot-waveguide is depicted in Figure 1(e).…”

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confidence: 99%

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

et al. 2016

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Photodetectors convert light into electrical signals and are at the heart of any optical link. In silicon photonics, traditionally germanium (Ge) [1,2] or III-V compound semiconductors [3,4] are used for photodetection and both technologies have reached a high level of maturity. Nevertheless, the direct monolithic integration of III-V photodetectors on Si wafers remains a challenge because of the large lattice constant mismatch and different thermal coefficients. Ge can be directly grown on crystalline Si, but pushing the bandwidth of Ge photodetectors to higher and higher frequencies [5,6,7] becomes increasingly difficult because of the material's poor electrical quality. One of the most promising routes to a new era of chip performance is the monolithic 3D integration of electronic and photonic components on the same chip, where a promising material for the photonic layers is SiN [8]. On these amorphous SiN layers, crystalline Ge (the prerequisite for realizing high

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confidence: 99%

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

et al. 2016

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“…Analysis of simulated absorption mode profiles ascribes the wavelength shift to mode-pulling ( Figure S6C) towards the lower refractive index air-filled nanocavity. 29,30 Notably, additional simulation results indicate that the spectral properties of these nanostructures can be significantly altered through subtle modification of the size and position of the internal nanocavities.Nanoscale species may be delivered into the NW nanocavities. Immersion of the nanoporous structure in a 5 nm Au colloid solution led to infiltration of Au nanoparticles into the nanocavities ( Figure 4C).…”

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confidence: 99%

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Kempa¹,

Kim

Day

et al. 2013

J. Am. Chem. Soc.

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Enhanced synthetic control of the morphology, crystal structure, and composition of nanostructures can drive advances in nanoscale devices. Axial and radial semiconductor nanowires are examples of nanostructures with one and two structural degrees of freedom, respectively, and their synthetically tuned and modulated properties have led to advances in nanotransistor, nanophotonic, and thermoelectric devices. Similarly, developing methods that allow for synthetic control of greater than two degrees of freedom could enable new opportunities for functional nanostructures. Here we demonstrate the first regioselective nanowire shell synthesis in studies of Ge and Si growth on faceted Si nanowire surfaces. The selectively deposited Ge is crystalline and its facet position can be synthetically controlled in situ. We use this synthesis to prepare electrically-addressable nanocavities into which solution soluble species such as Au nanoparticles can be incorporated. The method furnishes multi-component nanostructures with unique photonic properties and presents a more sophisticated nanodevice platform for future applications in catalysis and photodetection.Semiconductor nanowires (NWs) represent a diverse class of nanomaterials whose synthetically-tunable structural, electronic, and optical properties 1-3 have enabled active nanodevices including high-performance field-effect transistors, 4 ultra-sensitive biological probes, 5-7 and solar cells and photonic devices with tunable optical spectra. [8][9][10][11][12] NWs can be classified according to the number of degrees of freedom (DoF) they possess, which represent fundamental physical coordinates along which their structure can be manipulated. Axial and radial (core/shell) modulated NWs have 1 and 2 DoF, respectively, and have been extensively studied and characterized. 2,[13][14][15][16][17][18][19] Nevertheless, the properties of nanostructures possessing greater complexity and anisotropy have not been determined.A nanostructure with 3 DoF and higher can be realized by breaking the rotational symmetry of conventional radial shell growth ( Figure 1A). A high-resolution scanning electron micrograph (SEM) of a faceted core/shell Si NW ( Figure 1B) reveals well-defined surfaces that were previously indexed 9 as {111}, {011}, and {113}. NWs with this same morphology and set of surface facets serve as the faceted templates from which all subsequent nanostructures in this study are grown. Following chemical vapor deposition (CVD) synthesis of the SiNW templates, 9 introduction of GeH 4 and H 2 at lower tem- perature and pressure into the same reactor (Supporting Information) yields a new product featuring selective material deposition on the {111} and {011} Si surface facets ( Figure 1B). Energy dispersive x-ray spectroscopy (EDS) performed on the nanostructure ( Figure 1C) confirms the elemental identity of the deposited material as Ge and reveals that facet selectivity is preserved along the length of the nanostructure. A planview transmission electron micrograph (...

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“…Novel structures such as silicon slot waveguides (Figure 2(c)) have been introduced to guide light in narrow slots using low-refractiveindex materials [9]. Such waveguides are particularly useful for sensing applications because of the large fraction of light in the slot, which is normally fi lled with air or liquid and which contains the particles or molecules to be detected.…”

Section: Passive Waveguide Devicesmentioning

confidence: 99%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Guiding and confining light in void nanostructure

Cited by 1,604 publications

References 10 publications

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

Controlled Generation of a p–n Junction in a Waveguide Integrated Graphene Photodetector

Facet-Selective Growth on Nanowires Yields Multi-Component Nanostructures and Photonic Devices

Device engineering for silicon photonics

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