Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

Umezawa, Naoto; Shiraishi, Kenji; Miyazaki, Seiichi; Uedono, Akira; Akasaka, Y.; Inumiya, S.; Hasunuma, R.; Yamabe, Kikuo; Momida, H.; Ohno, Toshinobu; Ohmori, K.; Chikyow, Toyohiro; Nara, Yasuo; Yamada, Kazuo

doi:10.7567/ssdm.2006.p-1-30l

Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials 2006

DOI: 10.7567/ssdm.2006.p-1-30l

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Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

Naoto Umezawa¹,

Kenji Shiraishi²,

Seiichi Miyazaki³

et al.

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Guiding Principle of Energy Level Controllability of Silicon Dangling Bond in HfSiON

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