H passivation of shallow acceptors in Si studied by use of the perturbed-γγ-angular-correlation technique

Abstract

With the radioactive probe atom "'In as a representative for shallow acceptors in Si the passivation of acceptors by H was studied by using the perturbed-yy-angular-correlation technique. It is shown that during passivation, close In-H pairs are formed and that the number of pairs exactly accounts for the number of deactivated acceptors. The formation of In-H pairs was investigated with use of different hydrogenation techniques and the stability of acceptor-H pairs was studied in isochronal annealing experiments.

TDPAC and first-principles study of electronic and structural properties of a Pd-vacancy complex in undoped germanium

“…From the fact that the Pd-V complex started dissociating at 350 °C, we can estimate the activation energy for the dissociation of the complex at this annealing temperature. A detailed explanation of the estimation can be found in the work of Skudlik et al [31] and Wahl et al [32]. The activation energy of the dissociation is calculated from…”

Improving the Oxidation Resistance of Base Metal Powders

“…where the ratios N 0 /N are obtained from the initial and final fractional population of the complexes after annealing the sample at temperature T for time t. The parameter ν is a dissociation attempt frequency, which is assumed here as 10 13 s −1 [23]. The difference in the dissociation energies is obviously the result of the various energies required to form substitutional and interstitial carbon.…”

First-principles study of electric-field gradients at the Cd site for neutral hydrogen-cadmium complexes in crystalline silicon

“…[1][2][3][4] In earlier work, silicon p-type samples with low boron concentrations implanted with 111 In ͑which decays to 111 Cd͒ and exposed to H diffusion have been studied with perturbed angular correlation ͑PAC͒ spectroscopy as a function of temperature. 1 Two quadrupolar coupling constants are distinguished.…”

“…2 It seems that a high concentration of boron ͑larger than the normally used In doping concentration of 10 16 cm Ϫ1 ͒ inhibits the ocurrence of the other complex. There is a smooth transition from Q1/0 ϭ269 MHz, at high c B and low temperature, to Q1/Ϫ ϭ349 MHz at low c B and high temperature.…”

“…1, 2,4 Processes of dynamical fluctuations have been observed for the complex of lower frequency, and in Ref. 6 it was speculated ͑in analogy to H-Boron ͑H-B͒ case͒ to be due to H at BM tunneling between bonds.…”