“…Concerning the stability of the subsurface H atoms, for the Ni(111) surface dosed at low temperature, it has been demonstrated that they resurface with several tenths of electronvolt excess energy, 7,9,11 recombine with surface atoms, and desorb between 180 and 215 K as H 2 . 10,42 These experimental results have motivated many theoretical stud- [7][8][9]11,15,17,40,41,43 which found that the heights of the diffusion barriers from subsurface to surface sites depend on lattice relaxation, surface and subsurface H coverages, and also, at low temperature, tunneling effects and correlated motion of the hydrogen and nickel atoms. Anyhow, there is a general agreement on the fact that a high occupation number of surface sites decreases the resurfacing rate.…”