H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system

Kim, Jwayeon; Kim, Myung-chun; Yu, Jae-Keun; Park, Kyeongsoon

doi:10.1016/j.cap.2010.02.041

Cited by 22 publications

(9 citation statements)

References 7 publications

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“…By adjusting these processing parameters, ZnO films with properties that are compatible with optical devices may be obtained (Al-Kuhaili et al 2012;Lin et al 2004;Kim et al 2010b;Kapustianyk et al 2007). Additionally, doping with selective elements can induce changes in the structural, electrical, optical, and electronic properties of ZnO films (Morinaga et al 1997;Kim et al 2010a;Joshi et al 2010).…”

Section: Introductionmentioning

confidence: 98%

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The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

García-Méndez¹,

Segura

Coello

et al. 2015

Opt Quant Electron

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Using X-ray diffraction, UV-Visible spectroscopy, XPS and photoluminescence (PL) measurements, the structural, optical and electronic properties of ZnO and Cedoped ZnO thin films were investigated; the films were deposited on glass substrates by RF reactive-magnetron sputtering and post-annealed at 300 C in an oxygen atmosphere. Under similar deposition conditions, both films crystallized into hexagonal würzite lattice structures. The pure ZnO film exhibited a c-axis preferential orientation, whereas the Cedoped exhibited an a-axis preferential orientation. The films display uniform textured surfaces with columnar-like microstructures. The UV-Vis spectra showed high transparencies of 90 % on average for both films. Band gaps of E g ¼ 3:23 eV and E g ¼ 3:27 eV for pure and Ce-doped film, respectively, were measured. The doped film spectrum was shifted to the blue as a result of the Burstein-Moss effect. The XPS spectra show that the VB edge of the doped film shifts toward lower binding energy, at $ 1.3 eV below E F , while the VB edge of the pure film is located at $ 2.0 eV below E F . Additionally, Ce 3þ and Ce 4þ ions coexist in the ZnO matrix in fractions of $ 70 and $ 30 %, respectively. The PL spectra show that both types of ions induce extra electron states that allow multiple emission peaks in the blue-green region.

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Section: Introductionmentioning

confidence: 98%

“…It is mentioned in the literature that the emission of Ce-doped films is in either the UV or the visible region (Sofiani et al 2006;Luo et al 2012). When excited by UV light, the Ce-doped ZnO films emit violet, blue, green, and yellow, depending on the doping and crystal quality (Morinaga et al 1997;Kim et al 2010a;Joshi et al 2010).…”

Section: Introductionmentioning

confidence: 99%

The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

García-Méndez¹,

Segura

Coello

et al. 2015

Opt Quant Electron

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“…But owing to the complicated processes and low product consistence during preparing low-voltage ZnO chip varistors by ceramic methods, the alternative films deposition methods aiming at reducing the thickness of the components are more desirable6. To date, several physical and chemical methods have been proposed to prepare ZnO film varistors, such as magnetron sputtering, molecular beam epitaxy, pulsed laser deposition, chemical vapor deposition, spray pyrolysis, sol-gel process, and so on78910. Among them, magnetron sputtering is preferable due to its relatively high deposition rate, low substrate temperature, high film thickness uniformity, good controllability and high repeatability10.…”

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confidence: 99%

High-performance varistors simply by hot-dipping zinc oxide thin films in Pr6O11: Influence of temperature

Wang¹,

Peng²,

Wang³

et al. 2017

Sci Rep

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High-performance ZnO-Pr6O11 thin-film varistors were fabricated simply by hot-dipping oxygen-deficient zinc oxide thin films in Pr6O11 powder. The films had a composition of ZnO0.81 and a thickness of about 200 nm, which were deposited by radio frequency magnetron sputtering a sintered zinc oxide ceramic target. Special attention was paid on the temperature dependence of the varistors. In 50 min with hot-dipping temperature increased from 300–700 °C, the nonlinear coefficient (α) of the varistors increased, but with higher temperature it decreased again. Correspondingly, the leakage current (IL) decreased first and then increased, owing mainly to the formation and destroying of complete zinc oxide/Pr6O11 grain boundaries. The breakdown field (E1mA) decreased monotonously from 0.02217 to 0.01623 V/nm with increasing temperature (300–800 °C), due to the decreased number of effective grain boundaries in the varistors. The varistors prepared at 700 °C exhibited the optimum nonlinear properties with the highest α = 39.29, lowest IL = 0.02736 mA/cm2, and E1mA = 0.01757 V/nm. And after charge-discharge at room temperature for 1000 times, heating at 100 or 250 °C for up to 100 h, or applying at up to 250 °C, the varistors still performed well. Such nanoscaled thin-film varistors will be very promising in electrical/electronic devices working at low voltage.

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“…The properties of the ZnO films deposited by RF magnetron sputtering depend on the deposition parameters involved in the growth process, such as the RF power, sputtering gas pressure, gas flow rate, and temperature. By adjusting these processing parameters, ZnO films with properties that are compatible with optical devices may be obtained [8,15,16]. In regard to experimental parameters, post-annealing is a process widely used to improve the crystallinity and to reduce surface roughness of RF-sputtered films [8,[10][11][12].…”

Section: Introductionmentioning

confidence: 99%

“…Several techniques have been used to grow ZnO films, such as pulsed laser deposition [3], DC reactive magnetron sputtering [4,5], atomic layer deposition [6], electron beam evaporation [12], sol-gel [13], and spray pyrolysis [14]. In this context, reactive radio-frequency (RF) magnetron sputtering is an attractive alternative method for growing ZnO films because of the more accurate thickness control and a higher uniformity compared with other thin-film deposition techniques [15,16]. The properties of the ZnO films deposited by RF magnetron sputtering depend on the deposition parameters involved in the growth process, such as the RF power, sputtering gas pressure, gas flow rate, and temperature.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

García-Méndez¹,

Bedoya-Calle²,

Segura³

et al. 2015

Appl. Phys. A

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Zinc oxide films were deposited on glass substrates by RF reactive magnetron sputtering and post-annealed in vacuum at 100, 200, and 300 8C. Structural and optical properties of films were obtained using X-ray diffraction and UV-visible spectroscopy. Optical parameters were extracted from transmittance curves using the single-oscillator Drude-Lorentz model. The evolution of the optical and structural properties of films with the annealing process was investigated. The films crystallized into the hexagonal würzite lattice structure, with preferential growth along the c-axis [0002]. The results indicate that the crystalline quality of films improved with annealing, whereas transparency was reduced from 90 to 80 % at 300 8C. With post-annealing, the absorption edge shifted to the red, while the optical band gap decreased from E g ¼ 3:28 to E g ¼ 3:26 eV because of the Burstein-Moss effect. Calculated values of plasma frequency, w p ; fall within the IR range and decrease with temperature, from w p ¼ 5:56 Â 10 14 rad/s (2950 cm À1 ) to w p ¼ 1:1 Â 10 14 rad/s (587 cm À1 ).

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H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system

Cited by 22 publications

References 7 publications

The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

The influence of Ce doping on the structural and optoelectronic properties of RF-sputtered ZnO films

High-performance varistors simply by hot-dipping zinc oxide thin films in Pr6O11: Influence of temperature

Investigation of the annealing effects on the structural and optoelectronic properties of RF-sputtered ZnO films studied by the Drude–Lorentz model

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