Half-metallic ferromagnetism and intrinsic anomalous Hall effect in the topological Heusler compound 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>MnGe</mml:mi></mml:mrow></mml:math>

Chatterjee, Sudipta; Samanta, Saheli; Ghosh, Barnali; Mandal, Kalyan

doi:10.1103/physrevb.108.205108

Cited by 6 publications

(1 citation statement)

References 71 publications

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“…Heusler alloys have been investigated extensively as potential materials to serve as the PL, reference layer, and FL in the reader stack [9][10][11][12][13][14][15][16]. Due to their half-metallic band structure resulting in relatively high spin polarization, they strongly enhance the efficiency of spin transport.…”

Section: Introductionmentioning

confidence: 99%

Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet

Khamtawi,

Saenphum,

Chantrell

et al. 2023

J. Phys. D: Appl. Phys.

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Heusler alloy has been widely utilized in magnetoresistive sensors to enhance the device performance. In this work, we theoretically investigate the performance of Heusler-alloy-based magnetoresistive sensors with a synthetic antiferromagnet (SAF) layer. The atomistic model combined with the spin accumulation model will be used in this work. The former is used to construct the reader stack and investigate the magnetization dynamics in the system. The latter is employed to describe the spin transport behavior at any position of the structure. We first perform simulations of the exchange bias (EB) phenomenon in the IrMn/ C o 2 F e S i (CFS) system providing a high EB field. Then, a realistic reader stack of IrMn/CFS/Ru/CFS/Ag/CFS is constructed via an atomistic model. Subsequently, the resistance–area product (RA) and magnetoresistance (MR) ratio of the reader can be calculated by using the spin accumulation model. As a result of the spin transport behavior in the Heusler-alloy-based reader stack including SAF structure at 0 K, an enhancement of the MR ratio up to 120 % and RA < 40 m Ω ⋅ μ m 2 can be observed. This study demonstrates the important role of the Heusler alloy and SAF layer in the development of magnetoresistive sensors for the application of readers in hard disk drives with an areal density beyond 2 Tb in−2.

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Section: Introductionmentioning

confidence: 99%

Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet

Khamtawi,

Saenphum,

Chantrell

et al. 2023

J. Phys. D: Appl. Phys.

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THz probing of non-trivial topological states in Co2MnGe Heusler alloy thin films

Yadav,

Nivedan,

Kumar

2024

Applied Physics Letters

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Co2MnGe (CMG) has been demonstrated recently as a half-metallic ferromagnetic Heusler alloy, which possesses a topologically non-trivial band structure. This behavior is unique to such systems and hence warrants extensive experimental exploration for potential spintronic and chirality sensitive optoelectronic applications. Here, we demonstrate that an epitaxial thin film of CMG acts as a source of terahertz (THz) radiation upon photoexcitation by optical femtosecond laser pulses. Detailed experiments have revealed that a large contribution to THz emission occurs due to nonmagnetic or spin-independent origin; however, a significant contribution in the THz generation is evidenced through an excitation light helicity-dependent circular photogalvanic effect confirming the presence of topologically non-trivial carriers in the epitaxial CMG thin films. Furthermore, we show that not only the topological contribution is easily suppressed but also the overall THz generation efficiency is also affected adversely for the epitaxial films grown at high substrate temperatures.

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Perspective on the spin field-effect transistor

Ciorga

2024

J. Phys. D: Appl. Phys.

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The spin field effect transistor (sFET), proposed by Datta and Das in 1990, has long been regarded as a model semiconductor spintronic device, offering potential for new, more energy-efficient functionalities in electronic devices. Here, the overview is given how the pursuit of meeting the requirements for implementing the sFET concept has influenced spintronic research, leading to a greater understanding of spin phenomena in solids and resulting in numerous exciting effects. After looking back, based on the recent developments, the possible future directions of the sFET-related research is described.

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Half-metallic ferromagnetism and intrinsic anomalous Hall effect in the topological Heusler compound Co2MnGe

Cited by 6 publications

References 71 publications

Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet

Heusler-alloy-based magnetoresistive sensor with synthetic antiferromagnet

THz probing of non-trivial topological states in Co2MnGe Heusler alloy thin films

Perspective on the spin field-effect transistor

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