Halide Perovskites: A New Era of Solution‐Processed Electronics

Abstract

Organic–inorganic mixed halide perovskites have emerged as an excellent class of materials with a unique combination of optoelectronic properties, suitable for a plethora of applications ranging from solar cells to light‐emitting diodes and photoelectrochemical devices. Recent works have showcased hybrid perovskites for electronic applications through improvements in materials design, processing, and device stability. Herein, a comprehensive up‐to‐date review is presented on hybrid perovskite electronics with a focus on transistors and memories. These applications are supported by the fundamental material properties of hybrid perovskite semiconductors such as tunable bandgap, ambipolar charge transport, reasonable mobility, defect characteristics, and solution processability, which are highlighted first. Then, recent progresses on perovskite‐based transistors are reviewed, covering aspects of fabrication process, patterning techniques, contact engineering, 2D versus 3D material selection, and device performance. Furthermore, applications of perovskites in nonvolatile memories and artificial synaptic devices are presented. The ambient instability of hybrid perovskites and the strategies to tackle this bottleneck are also discussed. Finally, an outlook and opportunities to develop perovskite‐based electronics as a competitive and feasible technology are highlighted.

Electrode Engineering in Halide Perovskite Electronics: Plenty of Room at the Interfaces

“…Organic-inorganic hybrid halide perovskites with general formula of APbX 3 (A = MA, FA, and Cs; X = Cl, Br, and I) have become the fastest-advanced solar photovoltaic in recent years. [1][2][3][4][5][6][7][8][9] Owing to their extraordinary optical and electronic properties, such as high optical absorption, intense luminescence, ambipolar mobility, and long carrier lifetime, perovskites are able to realize mutual transformation between photons and realizing efficient contact for charge extraction with low contact resistance. [40] The junction interface between OSCs and electrode materials is more complicated than the ISC counterpart.…”

“…Organic–inorganic hybrid halide perovskites with general formula of APbX 3 (A = MA, FA, and Cs; X = Cl, Br, and I) have become the fastest‐advanced solar photovoltaic in recent years. [ 1–9 ] Owing to their extraordinary optical and electronic properties, such as high optical absorption, intense luminescence, ambipolar mobility, and long carrier lifetime, perovskites are able to realize mutual transformation between photons and carriers with high efficiency, thereby exhibiting munificent potential in diverse applications besides photovoltaic, including light‐emitting diodes (LEDs), [ 10–13 ] lase rs, [ 14–17 ] transistors, [ 18–21 ] detectors, [ 22–25 ] and photoelectrochemical catalysis. [ 26–29 ] However, the Achilles’ heel of perovskite electronics is unreliable contacts due to intricate interfacial effects between perovskite and contact electrodes.…”

Chemical Potential Diagram Guided Rational Tuning of Electrical Properties: A Case Study of CsPbBr3 for X‐ray Detection

“…The controllability of carrier polarity and concentration is a fundamental requirement for a semiconductor to produce high-performance electronic devices with a homojunction structure. [1][2][3][4] Currently, bipolar semiconduction has been achieved in some mainstream semiconductors mainly by aliovalent substitutional doping. For example, silicon (four valence electrons record Fermi level (E F ) shift achieved by changing the ratio of precursors has only been 0.6 eV, [12,15,16] which is much smaller than the theoretically predicted tuning range of E F (cf., 1.2 eV for CH 3 NH 3 PbI 3 ).…”

“…The controllability of carrier polarity and concentration is a fundamental requirement for a semiconductor to produce high‐performance electronic devices with a homojunction structure. [ 1–4 ] Currently, bipolar semiconduction has been achieved in some mainstream semiconductors mainly by aliovalent substitutional doping. For example, silicon (four valence electrons in a Si atom), which is the most common semiconductor used in integrated circuits, can be doped p‐type and n‐type with boron (three valence electrons) and phosphorus (five valence electrons), respectively.…”

Methylammonium Lead Tri-Iodide Perovskite Solar Cells with Varying Equimolar Concentrations of Perovskite Precursors

“…Aside from that, ionic conductivity in perovskites arises from ion/defect migration, which has revealed a fascinating feature toward switchable resistance depending on the history of the last applied bias. This ability to reliably regulate ion migration and hysteresis has aided in the development of memristors devices (memory + resistor) based on the unique structural properties provided by perovskites [20]. These remarkable properties make perovskites ideal candidates for their use as light-harvesting materials in solar cells and various other devices.…”