Hall Effect and Impurity Levels in Phosphorus-Doped Silicon

Long, Donald; Myers, John

doi:10.1103/physrev.115.1119

Cited by 36 publications

(10 citation statements)

References 6 publications

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“…For large r £? When various Group V impurities are observed experimentally, the excited-state structure observed in the spectra are in excellent agreement with theoretical predictions resulting from approximate solutions of equations (4). Since the orbits of these excited states are quite large, the potential in equation (2) should describe the situation very well.…”

Section: Symbolssupporting

confidence: 70%

Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon

1972

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Professor of Physics, VPI and S.U. AbstractWhen beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 meV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When Hthium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 meV and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191-meV and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-me V beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results. SUMMARYWhen beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 meV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-meV level is due to a more complex beryllium configuration than the 191-meV level. When lithium is thermally diffused into a beryllium-doped silicon sample, it produces two new acceptor levels at 106 meV and 81 meV. Quenching and annealing studies indicate that these new levels are due to lithium forming a complex with the defects responsible for the 191-meV and 145-meV beryllium levels, respectively. Electrical measurements imply that the lithium impurity ions are physically close to the beryllium impurity atoms. The ground state of the 106-meV beryllium-lithium level is split into two levels, presumably by internal strains. Tentative models are proposed to explain these results.

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Section: Symbolssupporting

confidence: 70%

Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon

1972

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“…But the derivation given here has not introduced any new concepts as Overhauser's theory does. At higher temperatures (T^T C ) the approximation leading from (4) to (9) is no longer valid and CM deviates from (12). It is not possible at present to estimate in detail the dependence of CM on T in this higher temperature region but it is obvious that the specific heat will begin to deviate from the linear law at a temperature proportional to jih/k.…”

Section: P(nt) = L8[h-k(t)l+andzh+k(t)lmentioning

confidence: 97%

“…For simplicity take S to be J (magnetic susceptibility measurements 9 show S is f or 2 but this produces no qualitative difference) and assume the interaction may be replaced by an Ising term. This Ising approximation is reasonably good provided that the spin arrangement in the ordered state has a unique orientation axis which we call the Z axis; it would certainly fail if there were spiral spin arrangements and of course, it cannot possibly give spin-wave effects.…”

Section: #=E /(N-m)s N -S M mentioning

confidence: 99%

Specific Heat of Dilute Alloys

Marshall

1960

Phys. Rev.

261

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Recently Zimmerman has observed that the addition of Mn to Cu produces a large contribution to the specific heat which, at low temperatures, is linear in temperature and independent of Mn concentration. It is shown that: (1) this remarkable result can be explained in terms of the well-known Ruderman-Kittel-Yosida spin-spin coupling via conduction electrons; (2) the specific heat results of Beck et al. on FeV and FeCr alloys are probably of essentially the same origin as those of Zimmerman on Cu Mn; (3) that there are serious objections to the mechanism of antiferromagnetism postulated by Overhauser and used by him to explain the specific heat results. In contrast to the Overhauser theory, no new concepts are involved and it is suggested that the large specific heat comes from a small fraction of Mn spins which, because of the random nature of the alloy, happen to be in small effective fields and therefore not strictly aligned. The theory depends on two plausible assumptions which have not, at present, been proved rigorously valid.

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“…Substitutional S, Se and Te in silicon lead to relatively deep donor levels [104] in comparison to pnictogens. For example, the thermal activation energies of sulfur and phosphorus are measured to lie 0.29 eV [105] and 44 meV [91] below the conduction band respectively. It is worthy of note that, at least in the case of Si, the trend is to become a more shallow donor with increasing atomic number, so that Se and Te are 0.29 eV and 0.20 eV, respectively [106].…”

Section: Chalcogen Donorsmentioning

confidence: 99%

“…In silicon, nitrogen is relatively insoluble, but phosphorus may be easily incorporated and leads to a shallow donor level at around 44 meV [91], and even shallower at 12 meV for germanium [92]. In contrast, nitrogen is highly soluble in diamond, commonly present in natural crystals where it is present in various aggregated forms.…”

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confidence: 97%

Theoretical models for doping diamond for semiconductor applications

Goss

Eyre

Briddon

2008

Physica Status Solidi (b)

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Diamond is a material with superlative properties in terms of carrier mobilities and device characteristics for high power electronics applications. Although p‐type diamond is routinely available using boron, n‐type material via impurity doping during the growth of diamond has historically been limited in success, partly because nitrogen is a hyper‐deep donor, but compounded by the compact lattice leading to low solubilities for alternative species. Implantation doping is often hampered by persistent residual damage leading to significant levels of compensation and the formation of dopant complexes with lattice vacancies. Experiment has been augmented by the application of quantum‐chemical methods to assess the likely properties should specific impurities or impurity complexes be realisable in real materials. The review outlines many of the doping strategies explored for diamond, including simple impurity doping and co‐doping. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Hall Effect and Impurity Levels in Phosphorus-Doped Silicon

Cited by 36 publications

References 6 publications

Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon

Study of Beryllium and Beryllium-Lithium Complexes in Single-Crystal Silicon

Specific Heat of Dilute Alloys

Theoretical models for doping diamond for semiconductor applications

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