Hall effect and transient surface photovoltage (SPV) study of Cu3BiS3 thin films Abstract

Abstract

Here, we present the electrical properties of the compound Cu 3 BiS 3 deposited by co-evaporation. This new compound may have the properties necessary to be used as an absorbent layer in solar cells. The samples were characterized by Hall effect and transient surface photovoltage (SPV) measurements. Using Hall effect measurements, we found that the concentration of n charge carriers is in the order of 10 16 cm-3 irrespective of the Cu/Bi mass ratio. We also found that the mobility of this compound (μ in the order of 4 cm 2 V-1 s-1) varies according to the transport mechanisms that govern it and are dependent on temperature. Based on the SPV, we found a high density of surface defects, which can be passivated by superimposing a buffer layer over the Cu 3 BiS 3 compound.

A comprehensive review on synthesis and characterizations of Cu3BiS3 thin films for solar photovoltaics

“…Numerous evaporation methods such as coevaporation, fast evaporation, thermal evaporation, and electron beam (EB) [21][22][23][24][25][26][27][28][29][30][31][32] have been employed for the deposition of Cu 3 BiS 3 thin films. Cu 3 BiS 3 thin films were deposited using two different attitudes:…”

Prospects of copper–bismuth chalcogenide absorbers for photovoltaics and photoelectrocatalysis

“…(iv) Interface-engineered device architectures: there are few reports on CBS photovoltaic devices, and most of them show a low efficiency. Thus, more studies on high-quality and defect-passivated CBS absorbers 91 are required. More device architectures need to be explored to assess the full potential of CBS.…”