2004
DOI: 10.1016/j.ssc.2003.11.002
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Hall effect in Al–W thin films

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Cited by 2 publications
(3 citation statements)
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“…Interestingly, r RT of Al 75 Mo 25 and Al 70 Mo 30 increases 3 times upon crystallization. In a similar Al x W 100Àx system, a maximum in r RT of 480 mU m is observed for as deposited amorphous alloys Al 80 W 20 [12], which upon crystallization increases for some 50 % [26]. For comparison, the resistivities of TETL amorphous metals are typically around 200 mU cm [10].…”
Section: For Comparison Inmentioning
confidence: 97%
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“…Interestingly, r RT of Al 75 Mo 25 and Al 70 Mo 30 increases 3 times upon crystallization. In a similar Al x W 100Àx system, a maximum in r RT of 480 mU m is observed for as deposited amorphous alloys Al 80 W 20 [12], which upon crystallization increases for some 50 % [26]. For comparison, the resistivities of TETL amorphous metals are typically around 200 mU cm [10].…”
Section: For Comparison Inmentioning
confidence: 97%
“…Hybridization cause a minimum in the electron density of states and, if the Fermi level falls within that minimum, the effective number of conducting electrons decreases and hence resistivity increases. From the results for amorphous AleMo and AleW [12] alloys, the hybridisation is strongest for Al:RM ratios equal to 3:1 and 4:1, respectively. The resistivity of crystallized alloys may be further increased by the strong Fermi level-Brillouin zone interaction which flattens electronic bands.…”
Section: For Comparison Inmentioning
confidence: 99%
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