Hall effect in single crystal CeCu<sub>2</sub>Si<sub>2</sub>under high pressure

We present detailed investigations on the effects of Ni substitution (x) on Ce(Cu 1¹x Ni x ) 2 Si 2 with x < 0.3, and a pressure ( p) study for x = 0.04(2), 0.05(2), and 0.09(2) by resistivity measurements. The Cu-Ni substitution suppresses both antiferromagnetic fluctuations and superconductivity in CeCu 2 Si 2 , and leads to a dramatic crossover from the heavy-fermion (HF) regime to the intermediate-valence (IV) regime with progressive Ni doping. The crossover can be characterized by a marked increase in Kondo temperature evaluated from resistivity, specific heat, and susceptibility measurements. In high-pressure resistivity measurements, the Ni-doped system exhibits similar anomalies to those observed in CeCu 2 Si 2 , namely, T-linear dependence, an enhancement of residual resistivity, and a marked decrease in the A coefficient of the T 2 -resistivity. Furthermore, we observed an unexpected upturn anomaly in resistivity in the Ni-doped system under high pressure. By constructing the x-p phase diagram of Ce(Cu 1¹x Ni x ) 2 Si 2 , we demonstrate that the crossover from the HF regime to the IV regime can be associated with these characteristic anomalies in resistivity.

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Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu₂Si₂

Ikeda

Ito

Araki

et al. 2015

J. Phys. Soc. Jpn.

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Hall effect in single crystal CeCu₂Si₂under high pressure

Cited by 1 publication

References 15 publications

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu₂Si₂

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu₂Si₂

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Hall effect in single crystal CeCu2Si2under high pressure

Cited by 1 publication

References 15 publications

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu2Si2

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu2Si2

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Hall effect in single crystal CeCu₂Si₂under high pressure

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu₂Si₂

Resistance Anomalies Accompanying Crossover from Heavy-Fermion Regime to Intermediate-Valence Regime: A Study of Cu–Ni Substitution and Pressure Effects on CeCu₂Si₂