Hall effect measurement in semiconducting chalcogenide glasses and liquids

Male, J.C.

doi:10.1088/0508-3443/18/11/305

Cited by 71 publications

(11 citation statements)

References 5 publications

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“…Many other systems can be dealt with on the model, although they can probably be dealt with by other models. Examples are Ag-Te and (possibly) Cu-Te (Dancy 1965) T1-Se (Nakamura and Shimoji 1969), and clialcogenide glasses (Male 1967). The work of Kolomiets and Pozdnev (1960) and of Pozdnev (1962) lend positive support to the model for As,Se,-As,Te, glasses and liquids.…”

Section: Discussionmentioning

confidence: 90%

“…It has been found by Male (1967), and others, that the Hall coefficient is negative and the thermoelectric power positive for many of these glasses. This could be explained by the presence of near-intrinsic clusters.…”

Section: Doping Of the Clusters And Effects Of Impuritiesmentioning

confidence: 87%

“…Since many of these have electrical properties which are similar in the liquid and vitreous states (Male 1967), they can perhaps be considered to be a special case of a liquid.…”

mentioning

confidence: 99%

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Structure and conductivity mechanisms in some liquid semiconductors

Hodgkinson¹

1971

Philosophical Magazine

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The electrical properties of liquid In-S and Tl-Te mixtures are examined in the light of a cluster model, consisting of small ' semiconducting ' clusters mixed up with highly conducting random liquid. It is found that this model can account for all the electrical properties, and is elso applicable to other systems including semiconducting glseees. Evidenoe on conhotless eleotrioal conductivity measurements on glasses tends to support the model. $ 1 . INTRODUCTION IN a previous paper (Hodgkinson 1970, afterwards called I), models of associated liquids were discussed. Although the paper was primarily aimed at discussing the formation of miscibility gaps by associated liquids, it was also relevant to the subject of liquid semiconductors. In the first place, it has been usual to suppose that liquid semiconductors are to some extent ordered. Secondly, many binary systems in which the liquid is semiconducting do in fact have the type of phase diagranis discussed in I. The general theory would be applicable even in cases where no miscibility gap appears. In fact, the models discussed in I can also account for the existence of a fairly large degree of order over a limited (but reasonably large) composition range, but without the appearance of a miscibility gap. This is particularly important in discussing, for example, the silversulphur system (Dancy and Derge 1963). In this system the liquid is semiconducting over only part of the composition range, even at temperatures above that at which the miscibility gap disappears. Other systems (e.g. Mg-Bi) have similar properties. Two basic models for the associated liquid were discussed in I : an overall order model and a model in which small clusters of highly ordered material were formed. The clusters were of two types-dongated or nearly spherical.Previous discussions (Cutler and Mallon 1966, Enderby and Simmons 1969) of liquid semiconductors have not considered the structure in detail. It has been assumed that there is some overall energy-level structure, similar to that in a crystalline semiconductor, although certain modifications are expected (Mott 1969). In the treatments of Cutler and Mallon it has been assumed implicitly that the energy-level structure of Tl-Te melts varies little with composition. Other treatments (Nakamura and Shimoji 1969) have included similar assumptions.

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Section: Discussionmentioning

confidence: 90%

Section: Doping Of the Clusters And Effects Of Impuritiesmentioning

confidence: 87%

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Structure and conductivity mechanisms in some liquid semiconductors

Hodgkinson¹

1971

Philosophical Magazine

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“…The chalcogeiiide glasses generally exhibit a nearly temperature independent, n-type Hall mobility (19). The discrepancy in sign between the Hall coefficient and the thermopower has received a great deal of attention (201, but it is not always observed; e.g.…”

Section: Experimental Results On Covalentmentioning

confidence: 99%

Localized electronic states in amorphous semiconductors

Adler¹,

Yoffa²

1977

Can. J. Chem.

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AVID A~~~~ and ELLEN 3. YOFFA. Can. j. Chern. 95. I920 (1977). The experimental results pertaining to the electronic structure of covaient amcrphoi~s semiconductors are briefly reviewed. It is found that three classes of materials exist, depending on the lowest-energy coordinatiofi of the predominant cheinicai component. In each case, the iransport properties are ordinarily conirolled by the Iocalized states in the gap resulting froin the minimum-mergy defect sites, in which the local coordination is not optimal for certain atoms. These :ocalized states are treated in terms of a Hubbard inodei, in whish the effective repulsion between two electrons simuitaneously resent on the same center is taken as positive for tetrahedrally bonded solids and negative for chaisogenide and pniciide glasses. The electronic struclure is discussed in detail. lt is shown that even such a simple model can account for almost ail of the experimental properties of the major classes of amorphoiis semiconductors. Chem. 55. i920 (1977). On passe brievement en revue ies rCsu1tats exptrimentaux se rapportant a la structure tlecironique de serniconducte~!rs amorphes covalents. On a trouvi qu'il existe trois classes de n-iateriaux en fonction de l'knergie ia plus basse ae coordination pour le compose chirnique ?rtdominant. Dans chaque cas, ies proprietts de transport sont ordinairenlent controiees par des ktats Iocalists dans le fcsse resultant des sites de dkfauts d'energie minimum dans iesquels la coordination locale n'est pas optimaie pour ccrtains atcmes. On traitc ccs crats localisks en terrnes du modeie de Hi~bbard dans Zequel ia rkpuision efictive entre deux electrons presents d'iine facon simultanee sur le mEme centre est considtree comme positive pour les solides lies d"une facon tetraedrique et negative pour les verres chaicogknides et pnictides. 0 1 7 discute en iiitail de la structure electronique. On montre que mime un rnodile aussi sinlple peut rendre cornpie de pratiquement routes les proprietis expirimentales des classes majeurs des semi canducteurs amorphes.[ progress in Llnderstandiiag the,r eiectrcnic These inciude not only the Group %V atoms: such bas coilreAs is -the case hr the as Ge a116 Si, but also the Grocp i 11-V materials. corresponciing crSrstzlline solids. both suchas GaAs, and Inore cornpiex solids with an and icllis anorphous exist (1). a""' "' %"aIence of fol~r: such as cdGeAs2. Because onlly *he former materials have been 'ntermedlate beiween these tlvo major ciasses suficientiy physical be-are 'he pt7ictideies: which contaii~ predominantly havior can be understood iia some detail, we the Group V atoms, Sb, As, or P.shall concentrate on them in this paper.in this paper, we analyze ":he experimentalThree major of covaient amorphous resuitson these main groups of covalent amorsolids be differentiated, depending on the phous se~l~isofiductor~. znd sun?.rnasize a mode! chemical of the constituent F r their eiectronic structure which appears to a,ecms. the most intensively inveseigated 5 e i i 1 a " g e a n e n t ...

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“…The conclusion concerning the sign of the Hall effect is attractive since it provides a neat explanation of the %-p" anomaly in which the Hall coefficient is n-type whereas the thermoelectric power is p-type (11). However it is really too definite since p-type Hall coefficients a r e occasionally found in amorphous materials (12 to 14).…”

mentioning

confidence: 99%

Charge Carrier Mobility at the Mobility Edge in Amorphous and Liquid Semiconductors

Boon¹

1972

Physica Status Solidi (b)

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Hall effect measurement in semiconducting chalcogenide glasses and liquids

Cited by 71 publications

References 5 publications

Structure and conductivity mechanisms in some liquid semiconductors

Structure and conductivity mechanisms in some liquid semiconductors

Localized electronic states in amorphous semiconductors

Charge Carrier Mobility at the Mobility Edge in Amorphous and Liquid Semiconductors

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