Hall electron mobility versus N spatial distribution in III–V–N systems

Effect of growth temperature on the properties of Ga(In)NAs thin films by atomic hydrogen-assisted RF-MBE

“…As a whole, the average electron mobility in Ga 1Ày In y N x As 1Àx was $1/10 of that in GaAs films. It has been reported that some ''unknown'' nitrogenrelated scattering centers with no temperature dependence are dominant in dilute nitrides [11,12], though details are not clear at present.…”

Carrier mobility characteristics in GaInNAs dilute nitride films grown by atomic hydrogen-assisted molecular beam epitaxy

“…10,11,14,15 Therefore, in the lightly doped n-GaInNAs films, the electron mobilities are expected to be strongly affected by these scattering centers and defects, and hence decrease rapidly with decreasing temperature. However, this effect would be weakened in the heavily doped n-GaInNAs, in which the electron populations in the conduction band are one to two orders of magnitude higher, and hence the potential fluctuations or Coulomb potentials would be screened.…”

“…Here the fundamental scattering mechanisms 15,16 with typical temperature dependence were assumed: ϰT 3/2 ͑ionized impurity scattering͒, ϰT −3/2 ͑polar optical phonon and deformation potential scattering 17 ͒, and ϰT −1/2 ͑space-charge scattering 18 and alloy scattering 9 ͒. If each scattering mechanism contributes simultaneously and independently, then the resultant carrier mobility can be given by the Mattiessen's rule,…”

Effects of Mg doping on the electrical and luminescence characterizations of p-type GaAsN alloys grown by MBE

“…In addition, alloy scattering should be considered for alloy semiconductors. As for GaAsN alloys, several authors have reported that N atoms act as a scattering center probably due to a local fluctuation of N composition in GaAsN alloys from Hall-effect measurements [38,39]. It should be noted that the N composition of 1% corresponds to the N concentration of $2 Â 10 20 cm À 3 ; this N Activation energy E a is estimated to be 22(7 5) meV ( Fig.…”