Hall Mobility Field Effect in Two Layer Conductivity Samples

Abstract

Classical Hall mobility experimental setup was applied for samples with parallel plane (sandwich) variable conductivity layers. The measured effective Hall mobility strongly depends on applied electric field and does not characterise the real carrier mobility. Numerical modelling explains the effect as a consequence of electric field redistribution and lowering at Hall contacts. Measurement of carrier mobility in such structures is suggested.

High Thermoelectric Figure of Merit of FeSb2−x Thin Films via Defect Engineering for Low-Temperature Cooling Applications

“…µ H is defined as where τ, and m * are the carrier relaxation time and carrier effective mass, respectively. 47,48 It can thus clearly by inferred that, when x < 0.2, the carrier scattering probability decreases, leading to the increase of µ H . The growing n and violent lattice vibration lead to a reduction in µ H with increasing temperature.…”

Electrical Response of CdS Thin Film and CdS/Si Heterojunction to Gamma Radiation

“…For the fresh CdS sample (Figure 4(a)), with increasing temperature, the carriers are scattered by an increasing number of thermally generated acoustic phonons and the mobility decreases with temperature, while for irradiated samples (Figures 4(b)-4(d)), the increase of the mobility with temperatures can be explained by an increase in the thermal velocity of the free carriers. In addition, the defects created by -radiation, which act as dopants and ionized scattering centers [24], will cause a smaller deflection in the carriers (Rutherford Scattering). Furthermore, it can be noted that the mobility of the charge carriers increases with the increase of -doses.…”