Hall photovoltage deep-level spectroscopy of GaN films

Shalish, Ilan; Oliveira, C.E.M. de; Shapira, Yoram; Salzman, J.

doi:10.1103/physrevb.64.205313

Cited by 11 publications

(6 citation statements)

References 40 publications

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“…These traps appeared to be size independent and are considered as bulk defects. The yellow luminescence in GaN is also a subject of much debate, as several studies have suggested that is originates at surface states [25][26][27] while other studies suggested have a bulk state [28]. The results suggested in this study may prove useful in resolving this controversy.…”

Section: Resultsmentioning

confidence: 71%

Particle size distribution study by small-angle X-ray scattering technique and photoluminescence property of ZnO nanoparticles

Yadav

Mishra

Pandey

2009

Journal of Experimental Nanoscience

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ZnO nanoparticles have been synthesised by thermal decomposition of zinc acetate at $800 C. The structural characteristics and size distribution of ZnO nanoparticles have been investigated by X-ray powder diffraction (XRD) and small-angle X-ray scattering (SAXS), respectively. SAXS study reveals nanoparticles are of different sizes: namely 23 wt% of 8 nm, 19 wt% of 21 nm and 58 wt% of 51 nm. These ZnO nanoparticles possess yellow visible emission at 552 nm. The polydispersity and single emission peak at 552 nm in ZnO nanoparticles suggest that the yellow emission might be a bulk property instead of having a surface origin in nanostructured ZnO. The surface impurities are characterised by Fourier-transform infrared spectroscopy. The quenching of band edge emission in ZnO nanoparticles seems due to the presence of surface impurities.

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Section: Resultsmentioning

confidence: 71%

Particle size distribution study by small-angle X-ray scattering technique and photoluminescence property of ZnO nanoparticles

Yadav

Mishra

Pandey

2009

Journal of Experimental Nanoscience

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“…28 The nature of the yellow luminescence band in GaN has been extensively studied, and has recently been suggested to originate at surface states. [29][30][31] In spite of the extensive work, the source of the yellow luminescence in GaN is a subject of much debate as several studies have suggested a bulk state. 32 The method suggested in this study may prove useful in resolving this controversy.…”

Section: Resultsmentioning

confidence: 99%

Size-dependent surface luminescence in ZnO nanowires

2004

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Nanometer sized whiskers ͑nanowires͒ offer a vehicle for the study of size-dependent phenomena. While quantum-size effects are commonly expected and easily predicted, size reduction also causes more atoms to be closer to the surface. Here we show that intensity relations of below-band-gap and band-edge luminescence in ZnO nanowires depend on the wire radius. Assuming a surface layer wherein the surface-recombination probability is 1 ͑surface-recombination approximation͒, we explain this size effect in terms of bulk-related to surface-related material-volume ratio that varies almost linearly with the radius. This relation supports a surface-recombination origin for the deep-level luminescence we observe. The weight of this surfaceluminescence increases as the wire radius decreases at the expense of the band-edge emission. Using this model, we obtain a radius of 30 nm, below which in our wires surface-recombination prevails. More generally, our results suggest that in quantum-size nanowires, surface-recombination may entirely quench band-to-band recombination, presenting an efficient sink for charge carriers that unless deactivated may be detrimental for electronic devices.

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“…The full width at half maximum of the XRD rocking curve of the ͑0002͒ reflection peaks was between 50 and 300 arc sec. The blue band ͑2.8 eV͒ has been observed in Si and undoped GaN by PL, cathodoluminescence, and photoconductivity measurements [18][19][20] and was attributed to a V Ga -O N complex related transition. Deep UV PL spectroscopy was employed to investigate the emission properties of Al x Ga 1−x N epilayers.…”

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confidence: 88%

Photoluminescence studies of impurity transitions in AlGaN alloys

Nepal¹,

Nakarmi²,

Lin³

et al. 2006

Applied Physics Letters

132

109

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Deep ultraviolet photoluminescence ͑PL͒ spectroscopy has been employed to investigate impurity transitions in Si doped Al-rich AlGaN alloys. In addition to the previously reported donor compensating centers-isolated cation vacancy with three negative charges ͑V III ͒ 3− and cation vacancy complex with two-negative charges ͑V III complex͒ 2− -a group of impurity transitions with higher emission energies has been observed in AlGaN alloys grown under different conditions, which has been assigned to the recombination between shallow donors and cation vacancy complexes with one-negative charge ͑V III complex͒ −1 . Similar to ͑V III ͒ 3− and ͑V III complex͒ 2− , the energy levels of ͑V III complex͒ 1− deep acceptors in Al x Ga 1−x N ͑0 ഛ x ഛ 1͒ alloys are pinned to a common energy level in vacuum. A strong correlation between the resistivity and PL emission intensities of the impurity transitions associated with cation vacancies ͑and complexes͒ was found.

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Hall photovoltage deep-level spectroscopy of GaN films

Cited by 11 publications

References 40 publications

Particle size distribution study by small-angle X-ray scattering technique and photoluminescence property of ZnO nanoparticles

Particle size distribution study by small-angle X-ray scattering technique and photoluminescence property of ZnO nanoparticles

Size-dependent surface luminescence in ZnO nanowires

Photoluminescence studies of impurity transitions in AlGaN alloys

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