The understanding of the mixed ionic–electronic
nature of
charge transport in metal halide perovskites (MHPs) and the role of
morphological and interface defects is crucial for improving the performance
of MHP-based photovoltaic devices. We present the results of a parallel
study on MAPbX3 (X = I, Br, Cl), synthesized as solution-processed
polycrystalline powders and as single crystals grown by a facile low-temperature-assisted
technique. We have studied ionic–electronic charge transport
in single-crystal and polycrystalline (pressed pellet and thick film)
samples in order to compare the effect of defects and trap states
associated with halide ion migration, device morphology, and interfaces
at grain boundaries as well as at electrodes. The mobility of halide
ions and associated Coulomb capture of electrons/holes was determined
by dielectric and space charge limited current (SCLC) dark I–V measurements and also simulated using an ionic–electronic
model. The defect capture cross section of electronic charge was found
to be proportional to the simulated halide ion density N
ion, which varied in the range of 1016–1022 cm–3 depending on the halide ion. The
trap state density from I–V measurements, N
trap ∼ 109 to 1010 cm–3, was found to be lower than those of previous
reports. Single-crystal MAPbI3 devices exhibited a low
capture cross section (σ– ∼ 10–16 cm–2), high mobility (μ
∼ 196 cm2/V-s), and large diffusion length (L
D ∼ 6 μm). The study shows that
nonradiative energy loss and carrier trapping are suppressed and transport
properties are enhanced by reducing grain boundary effects, along
with interface engineering to prevent halide ion accumulation at the
electrodes.