Halogens

Pichler, P.

doi:10.1007/978-3-7091-0597-9_7

Search citation statements

Order By: Relevance

Paper Sections

Select...

Diffusion In Materials -Dimat 20111

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2012

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 152 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Thus, the partitioning coefficients between the different phases were assumed to be independent of the concentration and equal to the ratios of the solubility limits measured in this work in the different phases. They are calculated based on solubilities equal to 1×10 20 and 3×10 19 at.cm -3 in δ-Ni 2 Si and Ni respectively, and 2×10 18 at.cm -3 for Si, which is the solubility measured in Si in equilibrium with SiB 3 [15] and extrapolated to a temperature of 500°C.…”

Section: Diffusion In Materials -Dimat 2011mentioning

confidence: 99%

Diffusion and Redistribution of Boron in Nickel Silicides

Blum

Portavoce

Chow

et al. 2012

DDF

View full text Add to dashboard Cite

The Diffusion and Solubility of B Implanted in δ-Ni2Si and Nisi Layers Is Studied by SIMS. it Is Observed that both Diffusion and Solubility Are Higher in δ-Ni2Si than Nisi. the Redistribution of B during Ni Silicidation Is Also Studied. the SIMS Profiles Show the Presence of Concentration Step in the Middle of the Final Nisi Layer. this Profile Shape Is Explained in Light of the Results Obtained in Preformed Silicides. the Proposed Model Is Supported by Redistribution Simulations that Can Reproduce the Main Features of the Profile.

show abstract

Section: Diffusion In Materials -Dimat 2011mentioning

confidence: 99%