Handbook of Electronic Materials

Neuberger, M.

doi:10.1007/978-1-4684-7917-1

Cited by 135 publications

(22 citation statements)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…which is a best quadratic fit to photoluminescence and optical absorption data in the literature (23,24). Figure 6 shows these data for a series of epi-layers of varying composition, taken on an optical system with a beam diameter of 2 ram.…”

Section: Galnas Epitaxial Layer Growthmentioning

confidence: 92%

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Whiteley

Ghandhi

1982

J. Electrochem. Soc.

View full text Add to dashboard Cite

Gallium indium arsenide is a promising semiconductor for a wide range of device applications. The compound Ga0.47Ino.53As has the same lattice constant as InP, prompting considerable effort to grow it epitaxially on InP in order to minimize defects at the epi-substrate interface. This paper outlines the conditions that we believe are necessary for growing epitaxial layers of Ga0.47Ino.a~As on InP substrates. Experiments have been conducted to grow these layers under atmospheric pressure, unlike previous work which was done at reduced pressure. Emphasis has been placed on the use of an in situ etching of the InP substrate, with HC1, which we find to be critical for layer growth. Etch rates were controllable between 2-20 ~m/min and no dopant pile-up was observed using Auger spectroscopy. Gal-zIn~As layers were grown at 700~ with 0.3 ~--x --~ 0.6 and exhibited a linear relation to the In/Ga ratio in the reactant stream.

show abstract

Section: Galnas Epitaxial Layer Growthmentioning

confidence: 92%

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Whiteley

Ghandhi

1982

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…For both Si and Al we have used the experimental lattice parameters (10.26 a.u. 76 and 7.60 a.u., 77 respectively), which is very close to the theoretical one and resulting in no appreciable difference in the computed spectra.…”

Section: Application To Bulk Si and Almentioning

confidence: 96%

Electron energy loss and inelastic x-ray scattering cross sections from time-dependent density-functional perturbation theory

et al. 2013

View full text Add to dashboard Cite

The Liouville-Lanczos approach to linear-response time-dependent density-functional theory is generalized so as to encompass electron energy-loss and inelastic X-ray scattering spectroscopies in periodic solids. The computation of virtual orbitals and the manipulation of large matrices are avoided by adopting a representation of response orbitals borrowed from (time-independent) densityfunctional perturbation theory and a suitable Lanczos recursion scheme. The latter allows the bulk of the numerical work to be performed at any given transferred momentum only once, for a whole extended frequency range. The numerical complexity of the method is thus greatly reduced, making the computation of the loss function over a wide frequency range at any given transferred momentum only slightly more expensive than a single standard ground-state calculation, and opening the way to computations for systems of unprecedented size and complexity. Our method is validated on the paradigmatic examples of bulk silicon and aluminum, for which both experimental and theoretical results already exist in the literature.

show abstract

“…Most of the scattering events occur right beyond the optical phonon threshold, which is 35 meV for GaAs. 12 In contrast, in non-polar semiconductors (Ge, Si) the optical-phonon emission rate grows slowly with energy from the threshold value. Light-hole life time, which is responsible for the inversion population and for the gain, is determined by acoustic phonon scattering, ionized impurity scattering, and carrier-carrier interaction.…”

Section: Introductionmentioning

confidence: 99%

Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures

et al. 2006

View full text Add to dashboard Cite

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden to Department of Defense, Washington Headquarters Services, Directorate for Information Operations and Reports (0704-0188), 1215 Jefferson Davis Highway, Suite 1204, Arlington, VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to any penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. REPORT DATE (DD-MM-YYYY) SPONSOR/MONITOR'S ACRONYM(S) AFRL-RY-HS SPONSOR/MONITOR'S REPORT NUMBER(S) AFRL-RY-HS-TP-2008-0020 DISTRIBUTION / AVAILABILITY STATEMENTDISTRIBUTION A: APPROVED FOR PUBLIC RELEASE; DISTRIBUTION UNLIMITED. SUPPLEMENTARY NOTESThe U. S. Government is joint author of this work and has the right to use, modify, reproduce, release, perform, display, or disclose the work. Published in Proc. of SPIE, Vol 6212 (2006). Cleared for Public Release by ESC/PA number: ESC-06-0670. ABSTRACTA concept for a terahertz laser in vapor-phase-grown homoepitaxial GaAs with spatially periodic doping profile was theoretically explored. Monte Carlo simulation of hole transport in multilayer delta-doped p-GaAs/GaAs structures in crossed electric and magnetic fields was performed to investigate possibilities of the terahertz amplification on intervalence-band light-to-heavy hole transitions. The results are compared to those calculated for uniformly doped bulk p-GaAs and recently proposed p-Ge/Ge structures. The improvement in the gain for delta-doped p-GaAs structures is about ~ 2 -3 times over bulk p-GaAs. Terahertz laser generation in the considered GaAs device concept appears feasible, as is growth of structures with active thicknesses sufficient to support quasioptical cavity solutions at 100 m vacuum wavelengths. Potential applications for the considered laser device include sensing of chem/bio agents and explosives, biomedical imaging, non-destructive testing, and communications. . SUBJECT TERMSterahertz, far infrared, laser, germanium, silicon, gallium arsenide, epitaxy. ABSTRACT A concept for a terahertz laser in vapor-phase-grown homoepitaxial GaAs with spatially periodic doping profile was theoretically explored. Monte Carlo simulation of hole transport in multilayer delta-doped p-GaAs/GaAs structures in crossed electric and magnetic fields was performed to investigate possibilities of the terahertz amplification on intervalence-band light-to-heavy hole transitions. The results are compared to those calculated for uniformly doped bulk pGaAs and recently proposed p-Ge/Ge structures. The improvement in the ga...

show abstract

Handbook of Electronic Materials

Cited by 135 publications

References 0 publications

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Factors Influencing the Growth of Ga0.47In0.53As on InP Substrates Using the Metalorganic Process

Electron energy loss and inelastic x-ray scattering cross sections from time-dependent density-functional perturbation theory

Terahertz gain on inter-valence-band transitions in multilayer delta-doped p-GaAs structures

Contact Info

Product

Resources

About