Handbook of the Band Structure of Elemental Solids

Papaconstantopoulos, D. A.

doi:10.1007/978-1-4419-8264-3

Cited by 594 publications

(317 citation statements)

References 12 publications

Supporting

Mentioning

293

Contrasting

Unclassified

Order By: Relevance

“…With these parameter values, the present model (without spin-orbit coupling) matches the non-relativistic band structure of bulk bcc tungsten given in Ref. 43 well throughout the Brillouin zone in the energy range from ∼10 eV below the Fermi level to ∼10 eV above the Fermi level.…”

Section: Modelsupporting

confidence: 80%

“…In the present work the i and K ij are fitting parameters chosen so that the model accurately reproduces the non-relativistic band structure of bulk bcc tungsten given in Ref. 43 if the Hamiltonian matrix is given by equation (1) and the overlap matrix O ij is calculated using a standard extended Hückel software package. 48 First, second and third neighbor matrix elements H 0 ij and O ij are included in the present model.…”

Section: Modelmentioning

confidence: 99%

“…43, all of the matrix elements H 0 ij and O ij are treated as fitting parameters. An advantage of the present methodology is that here, unlike in Ref.…”

Section: Modelmentioning

confidence: 99%

“…An advantage of the present methodology is that here, unlike in Ref. 43, the overlap matrix elements O ij are not fixed but depend on the atomic geometry of the tungsten and hence the present formalism can treat deformations of the tungsten crystal whereas the tight-binding model Table II. Tight-binding parameters Kij = Kji for bcc tungsten.…”

Section: Modelmentioning

confidence: 99%

See 3 more Smart Citations

Rashba-Dirac cones at the tungsten surface: Insights from a tight-binding model and thin film subband structure

Kirczenow

2016

Phys. Rev. B

View full text Add to dashboard Cite

A tight-binding model of bcc tungsten that includes spin-orbit coupling is developed and applied to the surface states of (110) tungsten thin films. The model describes accurately the anisotropic Dirac cone-like dispersion and Rashba-like spin polarization of the surface states, including the crucial effect of the relaxation of the surface atomic layer of the tungsten towards the bulk. It is shown that the surface relaxation affects the tungsten surface states because it results in increased overlaps between atomic orbitals of the surface atomic layer and nearby layers whereas electric fields that are due to charge transfer between the tungsten and the vacuum near the surface or between the bulk and surface layers do not significantly affect the Rashba-Dirac surface states. It is found that hybridization with bulk modes has differing strengths for thin film surface states belonging to the upper and lower Rashba-Dirac cones and results in reversal of the directions of travel of spin ↑ and ↓ electrons in most of the upper Rashba-Dirac cone relative to those expected from phenomenology. It is also shown that intrasite (not intersite) matrix elements of the spin-orbit Hamiltonian are primarily responsible for the formation of the Rashba-Dirac cones, and their spin polarization. This finding should be considered when modeling topological insulators, the spin Hall effect and related phenomena.

show abstract

Section: Modelsupporting

confidence: 80%

Section: Modelmentioning

confidence: 99%

“…43, all of the matrix elements H 0 ij and O ij are treated as fitting parameters. An advantage of the present methodology is that here, unlike in Ref.…”

Section: Modelmentioning

confidence: 99%

Section: Modelmentioning

confidence: 99%

See 2 more Smart Citations

Rashba-Dirac cones at the tungsten surface: Insights from a tight-binding model and thin film subband structure

Kirczenow

2016

Phys. Rev. B

View full text Add to dashboard Cite

show abstract

“…As the material properties of Pt, we use τ N sf = 0.01 ps [11], ν = 4.55 × 10 47 J −1 m −3 [33], σ N = 5 × 10 6 ( m) −1 [34], λ N sd = 1.5 nm, and θ N = 0.075 [35]. These properties are at 10 K. The transverse spin conductance g ⊥ is of the same order of magnitude as that of a ferromagnetic or ferrimagnetic material [20].…”

mentioning

confidence: 99%

Spin pumping and inverse spin Hall voltages from dynamical antiferromagnets

Johansen

Brataas

2017

Phys. Rev. B

View full text Add to dashboard Cite

Dynamical antiferromagnets can pump spins into adjacent conductors. The high antiferromagnetic resonance frequencies represent a challenge for experimental detection, but magnetic fields can reduce these resonance frequencies. We compute the ac and dc inverse spin Hall voltages resulting from dynamical spin excitations as a function of a magnetic field along the easy axis and the polarization of the driving ac magnetic field perpendicular to the easy axis. We consider the insulating antiferromagnets MnF 2 , FeF 2 , and NiO. Near the spin-flop transition, there is a significant enhancement of the dc spin pumping and inverse spin Hall voltage for the uniaxial antiferromagnets MnF 2 and FeF 2 . In the uniaxial antiferromagnets it is also found that the ac spin pumping is independent of the external magnetic field when the driving field has the optimal circular polarization. In the biaxial NiO, the voltages are much weaker, and there is no spin-flop enhancement of the dc component. DOI: 10.1103/PhysRevB.95.220408 Spin pumping is a versatile tool for probing spin dynamics in ferromagnets [1][2][3][4][5][6]. The magnitude of the pumped spin currents reveals information about the magnetization dynamics and the electron-magnon coupling at interfaces [7][8][9]. The precessing spins generate a pure spin flow into adjacent conductors. Inside the conductor, the resulting spin accumulation and currents give insight into the spin-orbit coupling. The inverse spin Hall effect (ISHE) is often used to convert the pure spin current into a charge current, which is detected [10,11]. Additionally, the induced nonequilibrium spins can be probed with x-ray magnetic circular dichroism measurements [12,13].Antiferromagnets differ strikingly from ferromagnets [14]. There are no stray fields in antiferromagnets, making them more robust against the influence of external magnetic fields. The recent discovery of anisotropic magnetoresistance [15][16][17], spin-orbit torques [18], and electrical switching of an antiferromagnet [19] demonstrate the feasibility of antiferromagnets as active spintronics components.The real benefit of antiferromagnets is that they can enable terahertz circuits. Unlike ferromagnets, the resonance frequency of antiferromagnets is also governed by the tremendous exchange energy. We recently demonstrated that the transverse spin conductance, a governing factor of spin pumping, is as large in antiferromagnet-normal metal junctions (AF|N) as in ferromagnet-normal metal junctions [20]. Furthermore, this result is valid even when the magnetic system is insulating. The firm electron-magnon coupling at the interface opens the door for electrical probing of the ultrafast spin dynamics in antiferromagnets [20,21].Precessing spins in antiferromagnets generate terahertz currents in adjacent conductors. This ability opens new territory in high-frequency spintronics. Such studies could become influential in gathering vital insight into fast electron dynamics and eventually for a broad range of applications. These electric sign...

show abstract