As
a prerequisite to the development of real label-free bioassay
applications, a high-throughput top–down nanofabrication process
is carried out with a combination of nanoimprint lithography, anisotropic
wet-etching, and photolithography methods realizing nanoISFET arrays
that are then analyzed for identical sensor characteristics. Here,
a newly designed array-based sensor chip exhibits 32 high aspect ratio
silicon nanowires (SiNWs) laid out in parallel with 8 unit groups
that are connected to a very highly doped, Π-shaped common source
and individual drain contacts. Intricately designed contact lines
exert equal feed-line resistances and capacitances to homogenize the
sensor response as well as to minimize parasitic transport effects
and to render easy integration of a fluidic layer on top. The scalable
nanofabrication process as outlined in this article casts out a total
of 2496 nanowires (NWs) on a 4 inch p-type silicon-on-insulator (SOI)
wafer, yielding 78 sensor chips based on nanoISFET arrays. The sensor
platform exhibiting high-performance transistor characteristics in
buffer solutions is thoroughly characterized using state-of-the-art
surface and electrical measurement techniques. Deploying a pH sensor
in liquid buffers after high-quality gas-phase silanization, nanoISEFT
arrays demonstrate typical pH sensor behavior with sensitivity as
high as 43 ± 3 mV·pH–1 and a device-to-device
variation of 7% at the wafer scale. Demonstration of a high-density
sensor platform with uniform characteristics such as nanoISFET arrays
of silicon (Si) in a routine and refined nanofabrication process may
serve as an ideal solution deployable for real assay-based applications.