HaptoMIRAGE

Abstract

OverviewHaptoMIRAGE is a simultaneous multi-user autostereoscopic display for seamless interaction with mixed reality environments. This system can project 3D contents in mid-air and enable as many as three participants observe the same contents with a 150 degrees wide-angle view. The system can be used in several scenarios, such as superimposition of 3D content onto real objects, and multi-user collaborative drawing in the real world. Further, users can interact with the 3D content, such as rotating it and viewing it from different angles, allowing them to easily create and feel the mixed reality world via tangible objects with multi-modal sensations. Active-shuttered Real-Image AutostereoscopyAs shown in Figure 4, Active-shuttered Real-Image Autostereoscopy (ARIA) (Nii et al, 2012) technology comprises an LCD display, an active shutter, and a Fresnel lens. The Fresnel lens makes the real image from the LCD display, while the transparent LCD panel-based active shutter provides timedivided rays of light for the left and right eyes. The user's point of view (PoV) is calculated with a camera-based motion capture system and the projected 3D content transformed to his/her viewpoint. The proposed HaptoMIRAGE system (Ueda et al, 2013) comprises three ARIA units, each with 50 degrees autostereoscopic field of view, resulting in a total of 150 degrees, which enables three users to experience the contents from different viewpoints simultaneously.

P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate

“…During the last decades, oxide semiconductors has been researched extensively because they provided good prospects as active materials for large area electronics due to the low temperature process ability and the superior electrical characteristics even with amorphous microstructure [1]. The backchannel etch (BCE) process in bottom gate configuration is imperative for oxide semiconductor TFTs because it provides valuable advantages such as small foot print, short channel length, less-mask and process step compared with etch-stop (ES) or other TFT structures [2]. Along with high transconductance, that is, high mobility, the capacitance in the TFT such as parasitic capacitance and channel capacitance should be kept low for high cut off frequency in the circuit application [3].…”