Hard Mask through UV Light-induced Damage to Low-k Film During Plasma Process for Dual Damascene

Matsunaga, N.; Okumura, Hirokatsu; Jinnai, Butsurin; Samukawa, Seiji

doi:10.7567/ssdm.2009.d-8-4

Cited by 1 publication

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“…The mechanism was possibly that oxygen excited in the plasma exposure easily moved through the pores and the plasma UV light penetrates deeper due to the low film density. It has been reported that oxidization of SiOCH film by ashing is induced from a combination of UV irradiation and oxygen radicals from plasma [25]. Therefore, all areas inside the pores of the film were oxidized deeper from the surface.…”

Section: Evaluation For Integration Damage and Cu Diffusionmentioning

confidence: 99%

Large-radius neutral beam enhanced chemical vapor deposition process for non-porous ultra-low-k SiOCH

2014

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Pores in ultra-low-k carbon-doped silicon oxide (SiOCH) film have been a serious problem because they produce fragile film strength, with the film incurring damage from integration and diffusion of Cu atoms in thermal annealing. To address this problem, we developed a practical large-radius neutral beam enhanced CVD process to precisely control the film structure so as to eliminate any pores in the film. We used the process with dimethoxy-tetramethyl-disiloxane (DMOTMDS) as a precursor to form a SiOCH film on an 8-inch Si wafer and obtained a non-porous film having an ultra-low k-value of 2.2 with sufficient modulus (>10 GPa). Analyzing the film structure by experimental and theoretical techniques showed that symmetric polymethylsilaxane (PMS) chains were grown and cross-linked to each other in the film. This particular film did not incur any damage from acid or alkali solution or oxygen plasma. Furthermore, the dense film almost completely resisted Cu diffusion into it during thermal annealing.

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Section: Evaluation For Integration Damage and Cu Diffusionmentioning

confidence: 99%