2012
DOI: 10.1063/1.4748299
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Hard x-ray photoemission spectroscopy of Bi2S3 thin films

Abstract: The electronic structure of polycrystalline Bi2S3 thin films deposited by thermal evaporation under high vacuum conditions was investigated with respect to their potential use as absorber materials in p-i-n solar cells by means of hard x-ray photoemission spectroscopy at the PETRA III synchrotron. A clear influence of the post-deposition treatment on the electronic structure could be observed, resulting in a lowering of the Fermi level as well as in a change of the electronic states in the valence band. Furthe… Show more

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Cited by 8 publications
(4 citation statements)
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“…By plotting (α h ν) 2 versus h ν we extrapolated the linear fitting line with the x -axis and obtained an optical edge of 1.59 eV (Figure a). This value is in good agreement with the reported 1.60 eV for a-Bi 2 S 3 film . As shown in the UPS spectra (Figure b), the Fermi level of a-Bi 2 S 3 , 4.45 eV, was established by subtracting the cutoff value from the excitation source of 21.2 eV.…”
Section: Resultssupporting
confidence: 90%
See 1 more Smart Citation
“…By plotting (α h ν) 2 versus h ν we extrapolated the linear fitting line with the x -axis and obtained an optical edge of 1.59 eV (Figure a). This value is in good agreement with the reported 1.60 eV for a-Bi 2 S 3 film . As shown in the UPS spectra (Figure b), the Fermi level of a-Bi 2 S 3 , 4.45 eV, was established by subtracting the cutoff value from the excitation source of 21.2 eV.…”
Section: Resultssupporting
confidence: 90%
“…This value is in good agreement with the reported 1.60 eV for a-Bi 2 S 3 film. 34 As shown in the UPS spectra (Figure 2b), the Fermi level of a-Bi 2 S 3 , 4.45 eV, was established by subtracting the cutoff value from the excitation source of 21.2 eV. Here, we would like to discuss the potential effect of a trace amount of metallic Bi in a-Bi 2 S 3 as observed by XPS measurement.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The binding energies for the spin-orbit splitting of the two characteristic Bi 4f 5/2 and Bi 4f 7/2 peaks are observed at 162.3 and 157 eV respectively (Figure 6-b), which present a good agreement with other results reported in the literature. [34][35][36][37][38][39] The binding energy corresponding to the characteristic Bi 5d peak of metallic bismuth is also observed at 26 eV, which coincides with the reported literature value. [27] The binding energy recorded at 531 eV corresponds to the characteristic peak of O1s, indicating the existence of oxide species on the surface of Bi-NPs.…”
Section: Xps and Ftir Analysissupporting
confidence: 89%
“…Optical transmission measurements were evaluated also for thickness determination and resulted in consistent values. A full description of the preparation process and the structural and electrical properties of similar films can be found in separate publications .…”
Section: Methodsmentioning
confidence: 99%