Harmonic Suppression of a Three-Stage 25–31-GHz GaN MMIC Power Amplifier Using Elliptic Low-Pass Filtering Matching Network

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SummaryThis paper presents a broadband monolithic millimeter‐wave integrated circuit GaN power amplifier (PA) with arbitrary two‐port complex‐impedance matching method. The proposed matching topology has been applied to interstage matching network design by modifying traditional coupling matrix and synthesizing a desired network. The optimum load traction technique is introduced to provide some more suitable Zopts. After continuous‐wave test, the three‐stage MMIC PA achieves a peak PAE of 39.1% with a 34.9 dBm output power from 23 to 29.5 GHz and the measured S21 is 32.5 dB with a ±2.5 dB gain variation. When driven by a 400 MHz OFDM modulation signal with a PAPR of 8.5 dB, the measured ACPR is improved to −40.6/−40.7 dBc with DPD. In this case, the PA achieves an average PAE of 11.7% and a 26.7 dBm average output power.

“…This work Duffy et al 15 Neininger et al 16 Chen et al 17 Giofre et al 18 Neininger et al 19 Technology 0.…”

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confidence: 86%

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confidence: 99%

Section: Introductionmentioning

confidence: 99%

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confidence: 99%

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confidence: 99%

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A 23–29.5 GHz three‐stage mm‐wave GaN power amplifier using arbitrary two‐port complex‐impedance matching method

Zhao

Zhu

Xia

et al. 2023

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An E band MMIC power amplifier design using 100 nm T‐Gate GaN HEMT on SiC

Jin,

Cheng,

Wang

et al. 2024

SummaryThe small signal modeling, design, fabrication, and measurement about monolithic millimeter‐wave integrated circuit (MMIC) using gallium nitride (GaN) power amplifier (PA) on silicon carbide (SiC) working at the E band are proposed in this paper. The two stage PA used customized 4 × 75 μm transistor with 100 nm T gate technology. The extraction and optimization of small signal model are based on single GaN high electron mobility transistor (HEMT)'s measurement. Balanced structure and new method are used by low impedance matching, which can simplify circuits prominently and benefit for die size reduction. Radial stub and LC stub are made the whole circuit in absolute stable status; the in‐series DC block metal–insulator–metal capacitor from the matching circuit ensure the process is within small tolerances. From the 61–66 GHz bandwidth, a peak 10.7 dB small signal gain is obtained from the designed MMIC GaN PA, and also, the maximum output power can reach 29.7 to 30.4 dBm from 61 to 66 GHz, with an associated the peak drain efficiency of 18.8%. The final die size without dicing slot is 3.0 × 1.74 mm2.

Modified elliptic response bandpass filtering integrated high‐efficiency GaN MMIC power amplifier at 24–28 GHz

Dong,

Zhu,

Liu

et al. 2024

SummaryIn this paper, an out‐of‐band suppression enhanced high‐efficiency millimeter‐wave (mm‐wave) gallium nitride (GaN) microwave monolithic integrated circuit (MMIC) filtering power amplifier (FPA) is presented. A modified elliptic response bandpass filtering (BPF) output matching network (OMN) is used to achieve low loss and high out‐of‐band rejection. The circuit of the presented BPF OMN is given and its synthesized method is introduced. The simulated S‐parameters show that the OMN has a low‐loss in‐band response and a desired out‐of‐band rejection performance with two transmission zeros (TZs). To demonstrate this idea, a two‐stage 24–28‐GHz GaN MMIC PA is designed and implemented in a 0.15‐μm GaN‐on‐SiC process, with a mask area of 2.4 × 1.0 mm2. Experimental results show that the realized MMIC PA achieves a small signal gain of 18.8 dB from 24 to 28 GHz with ±1.2‐dB gain flatness and 40‐dB rejection at 19.43 and 33.8 GHz. The saturated power‐added efficiency (PAE) is higher than 29% from 24 to 28 GHz, with a peak PAE of 36.3% at 27 GHz. The output power is within the range of 33.8 to 35.6 dBm in the operating band. For a 100‐MHz five‐carrier LTE signal, the PA can achieve ACLR better than −40 dBc over the band with digital predistortion.