2015
DOI: 10.1016/j.solmat.2015.07.004
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Harnessing ALD to directly map the morphology of organic photovoltaic bulk heterojunctions

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Cited by 17 publications
(16 citation statements)
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“…21 Previous reports of oxide ALD (Al2O3 and ZnO) onto polymers showed that ALD precursors can diffuse into polymer films, becoming kinetically trapped and then reacting with the H2O pulse to form embedded particles, rather than forming compact films on the surface. 23,[34][35][36] In those studies, the metal oxide particles were clearly visible via backscattered electron (BSE) imaging of the film cross-section. To examine this possibility, we also performed BSE imaging of our devices (Figure S7).…”
Section: Resultsmentioning
confidence: 99%
“…21 Previous reports of oxide ALD (Al2O3 and ZnO) onto polymers showed that ALD precursors can diffuse into polymer films, becoming kinetically trapped and then reacting with the H2O pulse to form embedded particles, rather than forming compact films on the surface. 23,[34][35][36] In those studies, the metal oxide particles were clearly visible via backscattered electron (BSE) imaging of the film cross-section. To examine this possibility, we also performed BSE imaging of our devices (Figure S7).…”
Section: Resultsmentioning
confidence: 99%
“…In parallel, HEG-DT also slightly reduces the amount of PCBM in the film possibly due to the increased P3HT crystallinity which reduces the amount of PCBM in P3HT domains. 29 After confirming that the HEG-DT does not significantly affect the bulk morphology, it is first necessary to confirm that the additive does not enrich the blend prior to metal deposition. The distribution and location of the additive in the as-spun blends are studied by comparing the cross section HRSEM images of an as-spun blend with no HEG-DT ( Fig.…”
Section: Resultsmentioning
confidence: 99%
“…36 Recently, we reported a new labeling approach based on vapor phase infiltration (VPI) that can be utilized to characterize the BHJ morphology evolution as a function of blend composition and processing method. [37][38][39][40] VPI infuses inorganic materials into an organic matrix by exposure to gaseous precursors (for this study diethylzinc and water) that diffuse into the film and in situ convert to an inorganic product (in this case, ZnO). 41 The diffusion and retention of the gaseous precursors, and hence the location of the inorganic ''label'', are governed by the local structure and composition of each domain.…”
Section: Introductionmentioning
confidence: 99%
“…41 The diffusion and retention of the gaseous precursors, and hence the location of the inorganic ''label'', are governed by the local structure and composition of each domain. [38][39][40] The high contrast between the organic matrix and the deposited inorganic phase offers distinct, simple and fast visualization of the different phases by scanning electron microscope (SEM). In earlier studies, we found that fullerene-rich domains inhibit precursor diffusion and retention, affectively preventing the incorporation of the inorganic phase in fullerene-rich domains.…”
Section: Introductionmentioning
confidence: 99%
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