Harsh environments minimally invasive optical sensor using free-space targeted single-crystal silicon carbide

Riza, Nabeel A.; Arain, A.; Perez, Frank

doi:10.1109/jsen.2006.874447

Cited by 26 publications

(21 citation statements)

References 13 publications

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“…Specifically, both optical and mechanical properties of the thick SiC chip in combination with wired and wireless optics were intelligently engaged with smart signal processing methods to realize the much needed extreme environment temperature sensing [10][11][12][13][14][15][16] as well as pressure sensing [17][18][19].…”

Section: F: Executive Summarymentioning

confidence: 99%

“…In short, the sensor system operates to actively target the SiC optical chip and then to properly recover the received retro-reflected temperature coded beam to deduce the SiC chip and hence the gas environment temperature. The SiC chip acts as a temperature sensitive Fabry-Perot cavity and previously described multi-wavelength signal processing techniques implemented via the control computer can be used to deduce the optical chip temperature [11,37]. Do note the SiC chip is of a thick (e.g., 400 microns) single crystal SiC material that is optically flat and mechanically robust for handling high (e.g., 160…”

Section: G4 Temperature Sensor Probe Commercial Test Rig Test At Simentioning

confidence: 99%

“…atmospheres) pressures [11] and high temperatures (e.g., 1500 ºC). The SiC material that makes the chip and frontend probe is also robust to chemical attack with excellent thermal properties for handling extreme temperatures [37].…”

Section: G4 Temperature Sensor Probe Commercial Test Rig Test At Simentioning

confidence: 99%

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Ultra-High Temperature Sensors Based on Optical Property

Riza¹

2008

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Section: F: Executive Summarymentioning

confidence: 99%

Section: G4 Temperature Sensor Probe Commercial Test Rig Test At Simentioning

confidence: 99%

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Ultra-High Temperature Sensors Based on Optical Property

Riza¹

2008

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“…Recently, with US Department of Energy (DOE) sponsorship, we have proposed, designed, and demonstrated a new class of hybrid wireless-wired extreme environment temperature and pressure sensors using single crystal SiC optical chips [1][2][3][4]. A critical aspect of these sensors is the packaging of the thick single crystal SiC optical chip within the appropriate front-end sensing assembly suited for temperature and/or pressure measurement.…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of an Extreme Temperature Sensing Optical Probe using Silicon Carbide Technologies

2007

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For the first time, to the best of our knowledge, designed and fabricated is an extreme temperature optical sensor using a single crystal Silicon Carbide (SiC) optical chip packaged within a sintered SiC hollow tube. The fabricated assembly forms the critical frontend probe of the proposed hybrid wireless-wired optical sensor used for measuring >1000 oC temperatures within hot gas chambers such as in coal-fired power generation systems. Initial probe test experiments show the required water-tight chip-end probe sealing and the desired retro-reflected optical interferograms required for temperature-based signal processing.

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“…With respect to radiation hardness and stability, photodetectors based on wide-band gap (WBG) semiconductors (diamond, SiC, III-nitrides, and some III-V compounds) are theoretically more attractive than silicon photodiode detectors because of the higher strength of their chemical bonding structure [9]- [11]. These WBG photo-detectors also possess an intrinsic visible-blindness [10] and high thermal conductivity [10]- [12].…”

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confidence: 99%

Stability Characterization of High-Sensitivity Silicon-Based EUV Photodiodes in a Detrimental Environment

et al. 2013

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In extreme-ultraviolet (EUV)-based applications, such as next-generation EUV lithography, the detector surface has to be periodically exposed to aggressive gasses as a cleaning step to prevent the build-up of contaminating layers. In this paper, we report excellent EUV radiation hardness and robustness to harsh working conditions of a Si-based boron-doped ultrashallow junction photodiode (B-layer diode) fabricated by a pure boron chemical vapor deposition (CVD) technology. Experimental results show unchanged responsivity of the photodiode (within the measurement uncertainty) with radiation dose up to 0.22 MJ/cm 2 . The surface cleaning tests with hydrogen radicals (H*) confirm that the electrical/optical performance of the detector is stable with only minor change of the characteristics. In addition, the detectors must be operated in vacuum without an air-cooling system, as air is not transparent for EUV photons. An on-chip sensor system, which contains B-layer diodes and bipolar-transistor-based temperature sensors, is developed for compensating the thermal drift of the photodiode output signal when the diode is heated up by the EUV radiation. Furthermore, this on-chip sensor system also demonstrates the full compatibility of this novel pure boron CVD technology with standard Si-based integrated circuit processing.

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Harsh environments minimally invasive optical sensor using free-space targeted single-crystal silicon carbide

Cited by 26 publications

References 13 publications

Ultra-High Temperature Sensors Based on Optical Property

Ultra-High Temperature Sensors Based on Optical Property

Design and Fabrication of an Extreme Temperature Sensing Optical Probe using Silicon Carbide Technologies

Stability Characterization of High-Sensitivity Silicon-Based EUV Photodiodes in a Detrimental Environment

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