$\hbox{Zr}_{0.27}\hbox{Ti}_{0.73}\hbox{O}_{2}$-Based MSM Ultraviolet Detectors With Pt Electrodes

Zhai

et al. 2023

Sensors

The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion. Here, a photodetector based on polycrystalline perovskite MAPbCl3/TiO2 nanorods heterojunctions has been fabricated to overcome the shortcoming. The structure was composed of horizontal MAPbCl3 polycrystalline and vertically aligned TiO2 nanorods array. Many localized depletion regions at the MAPbCl3/TiO2 interface can reduce the dark current. The TiO2/MAPbCl3 detector shows high performance including a high ratio of light-dark current of about six orders of magnitude, which is much larger than that of the TiO2 detector. This study indicates the potential in the TiO2/MAPbCl3 heterojunction to fabricate high-performance UV detectors.

Section: Introductionmentioning

confidence: 99%

A High-Performance UVA Photodetector Based on Polycrystalline Perovskite MAPbCl3/TiO2 Nanorods Heterojunctions

Zhai

et al. 2023

Sensors

“…In recent years, more and more attention has been paid to the ultraviolet (UV) photo detectors due to the potential applications in military and civil, which were based on wide band gap semiconductors such as ZnO, SiC, and GaN [1][2][3]. Wide band gap semiconductor TiO 2 is a good candidate in fabricating UV detectors due to its outstanding physical and optical properties [4]. TiO 2 has three crystalline polymorphs: anatase, rutile and broolite.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet Detector Based on TiO<sub>2</sub> Thin Film

Huang

et al. 2013

AMR

In this paper, TiO2 thin film with MSM (metal-semiconductor-metal) structure was used to fabricate ultraviolet (UV) detector. The film was fabricated via sol-gel method on silicon wafer with 300nm oxide layer and annealed at four different temperatures (400oC, 500oC, 600oC and 800oC). The quality of the thin films was characterized by means of X-ray diffraction and scanning electron microscope. Then a pair of symmetric Ag electrodes were deposited by thermal evaporation through a shade mask of interdigital structure. The photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied with or without explored to 254nm UV light. The electrical measurements of the device show a big increase of current when explored the device to 254nm UV light, and the rise time of the device is very quick, but the fall time is relatively long. The detector with simple fabrication process, low cost, and superior performance would provide a potential application in UV detectors.

Application of Nanostructured TiO₂ in UV Photodetectors: A Review

et al. 2022

moderate UV light is beneficial for human health, however, excessive UV radiation can cause various human diseases as well as strong destruction to the output of crops and the lifespan of buildings. [1b,3a,4] Therefore, an efficient detection of UV radiation is of significant importance in widespread applications, for example, chemical, environmental, and biological analysis or warning, astronomical investigation, and optical communication. [1c,5] For forewarning UV radiation with high-efficiency, a wide variety of UV PDs such as photomultiplier and silicon diode, have been extensively investigated and applied in the past decades. Nevertheless, there are intrinsic imperfections for the present commercial PDs, such as fragile, large volume, and excessive cost, which are obstacles when meeting the growing requirement of miniaturized and reliable UV detection devices for portable or shipped applications. In recent years, the development of semiconductor-based PDs that work according to the photoelectric effect has received great research interest. [1b,3a,6] In this scenario, a delicate selection of suitable materials with efficient morphological, microstructural, and photoelectrical characteristics plays a key role in the construction of PDs with high-performance. Generally, the PDs work following several different physical mechanisms, that is, surface plasma-wave-assisted effect, photoconductive effect, photothermoelectric effect, and photovoltaic effect, which have been systematically demonstrated in the previous report. [7] More recently, a new generation of wide-bandgap semiconductors including the classification of nitrides (GaN, AlN, BN, etc.), carbides (SiC, diamond, etc.), sulfides (ZnS, etc.), oxides (ZnO, Ga 2 O 3 , TiO 2 , etc.), halide perovskites (e.g., CH 3 NH 3 PbCl 3 ), [8] and their combinations, is emerged as the most attractive material candidates for constructing high-performance UV PDs, owing to their unique advantages, for instance low permittivity, high breakdown electric-fields, good thermal conductivity, high electron saturation rates, excellent radiation resistance, and their appropriate spectral range for UV response. [1d] In addition, the photoelectric conversion processes of the semiconductorbased PDs can be generally described by the behaviors of charge carriers, such as their generation, separation, transportation, and extraction. [9] Therefore, any factor that influences the photon-generated carrier behaviors should be the key parameter for further tuning their photodetecting performances. It As a wide-bandgap semiconductor material, titanium dioxide (TiO 2 ), which possesses three crystal polymorphs (i.e., rutile, anatase, and brookite), has gained tremendous attention as a cutting-edge material for application in the environment and energy fields. Based on the strong attractiveness from its advantages such as high stability, excellent photoelectric properties, and lowcost fabrication, the construction of high-performance photodetectors (PDs) based on TiO 2 nanostructures is ...