$hboxBaSm_2hboxTi_4hboxO_12$Thin Film for High-Performance Metal–Insulator–Metal Capacitors

Abstract

A high capacitance density of 4.84 fF/µm 2 and a low leakage current density of 4.28 fA/pF·V were obtained for a 138-nm-thick crystalline BaSm 2 Ti 4 O 12 (BST) film. The 100-nm-thick amorphous BST film exhibited a high capacitance density of 3.91 fF/µm 2 and a low leakage current of 1.24 fA/pF·V. The crystalline BST film had quadratic and linear voltage coefficient of capacitance (VCC) of −295 ppm/V 2 and 684 ppm/V, respectively, and a temperature coefficient of capacitance (TCC) of −136 ppm/ • C at 100 kHz. The amorphous BST film also showed quadratic and linear VCCs of 48.6 ppm/V 2 and −738 ppm/V, respectively, with a low TCC of 169 ppm/ • C at 100 kHz. Index Terms-Capacitor, high-κ, metal-insulator-metal (MIM), temperature coefficient of capacitance (TCC), voltage coefficient of capacitance (VCC).