HCD-Induced GIDL Increase and Circuit Implications

Ceccarelli, Edoardo; Manning, Kevin; Macera, Giuseppe; Dempsey, Dennis; Heffernan, Colm

doi:10.1109/iolts.2019.8854462

Cited by 2 publications

(1 citation statement)

References 14 publications

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“…In the subsequent compensation process, we measured I d -V gs curves in both linear and saturation region with different applied V back from 0 V to 6 V. All the measurements were done using Keysight B1500A semiconductor analyzer at room temperature. V back = 0 V. The curve shift of both devices follows the conventional HCD behavior observed in MOSFETs [16], [17], [18]. It can also be seen that HCD induced curve shift in π gate device is severe than the one in π -GAA-π device.…”

Section: Resultssupporting

confidence: 61%

Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET

Qian

Liu

Yao

et al. 2023

IEEE J. Electron Devices Soc.

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Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current (I off ) and undesirable static power consumption. In this work, we studied the hot carrier degradation and FBB compensation in π -GAA-π MOSFET. With the unique hybrid gate structure, the performance degradation is found to be less severe than pure π gate device; and moreover it can be partially recovered by FBB without the sacrifice of I off . The presence of π gates offer the back gate tunability that is not provided by pure GAA gate; while the GAA gate component can effectively prevent the impact of FBB from affecting the surface potential. Our findings in π -GAA-π hybrid gate MOSFETs would be beneficial for device reliability improvement.INDEX TERMS Forward back biasing technique, aging compensation, hot carrier degradation, off-state leakage current.

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Section: Resultssupporting

confidence: 61%