Healing of reduced graphene oxide with methane + hydrogen plasma

Atmospheric Dry Hydrogen Plasma Reduction of Inkjet‐Printed Flexible Graphene Oxide Electrodes

“…It provides as wift, clean methodo fm odifying surface properties. [7,44,45] The effects of hydrogen plasma on graphene surface chemistry have been addressed comprehensively by Felten et al [46] However,l ow-pressure plasma is not compatible with the fast, inline, roll-to-roll processes demanded by the economical manufacture of flexible electronics. The processing of GO to reduced graphene oxide (rGO) was performed in 1-64 s, and sp 2 /sp 2 + sp 3 carbonc oncentration increased from approximately 20 %t o9 0%.S ince the plasma reduction was associated with an etchinge ffect, the optimal reduction time occurred between 8a nd 16 s. The surfaces howed good mechanical stability when deposited on polyethylene terephthalate flexible foils and significantly lower sheet resistance after plasma reduction.T his method for dry plasma reductionc ould be important for large-area hydrogenation and reduction of GO flexible surfaces, with present and potential applications in aw ide variety of emerging technologies.…”

“…[36] Low-pressure hydrogen plasma has also been used to modify ZnO, [37] indiumdoped tin oxide, [38] TiO 2 , [39][40][41][42] aluminum-dopedz inc-tin oxide, [43] and GO. [7,44,45] The effects of hydrogen plasma on graphene surface chemistry have been addressed comprehensively by Felten et al [46] However,l ow-pressure plasma is not compatible with the fast, inline, roll-to-roll processes demanded by the economical manufacture of flexible electronics. In contrast, atmosphericp lasma is compatible with inline roll-to-roll manufacturing and atmosphericd ry plasma reduction by using hydrogen may prove an important process in the modification of surface chemistry in the nearf uture.…”

Advance in Using Plasma Technology for Modification or Fabrication of Carbon‐Based Materials and Their Applications in Environmental, Material, and Energy Fields

“…Similarly, Zhu et al. [ 127 ] proposed a novel method to heal defects in rGO by CH 4 +H 2 plasma treatment. The results revealed that the addition of hydrogen remarkably shifts the equilibrium between etching and growth of graphene while suppressing the nucleation of carbon nanoparticles.…”

Plasma Assisted Reduction of Graphene Oxide Films

“…Since then, in the last 13 years, several kinds of plasma-assisted reduction processes were developed. To name some ways plasma generation is utilized: radio-frequency (RF) plasma [ 150 , 162 , 178 , 179 , 180 , 181 , 182 , 183 , 184 , 185 , 186 , 187 , 188 , 189 , 190 , 191 , 192 , 193 , 194 , 195 , 196 , 197 ], low-pressure direct current (DC) plasma [ 198 , 199 , 200 , 201 ], micro-DC plasma [ 202 ], atmospheric pressure glow discharge (AGD) plasma [ 56 ], electron beam (EB) plasma [ 203 ], active screen (AS) plasma [ 204 ], atmospheric pressure plasma jet (APPJ) [ 205 ] and μ-APPJ [ 206 ], and dielectric barrier discharge (DBD) plasma [ 207 , 208 ]. In the following sections, the reduction processes classified according to the discharge gas will be discussed in detail.…”

“…Methane plasma is a popular choice for the defect repair and reduction of GO. Pure discharge of CH 4 [ 93 ], as well as in combination with Ar [ 180 , 185 , 203 ] or H 2 [ 179 , 184 , 189 , 207 , 221 ], has been utilized. Cheng et al [ 93 ] treated GO-monolayers on Si/SiO 2 substrates with CH 4 -plasma (100 W, RF, ~575 °C, 10 min) that resulted in a decrease of the I D /I G ratio from 1.03 to 0.53, indicating healing of defects and increasing conversion of sp 2 C-atoms.…”