Heat- and light-soaking behavior of RbF-treated Cu(In,Ga)Se2 solar cells with two different buffer layers

Radiation resistant chalcopyrite CIGS solar cells: proton damage shielding with Cs treatment and defect healing via heat-light soaking

“…Aer the HLS, the performance of the Cs-treated sample under lower uence (HLS-p-Cs1) was even higher than that in the initial state. This improvement can be attributed to the healing effect on the CIGS absorber as well as the potential enhancement in carrier concentration through alkali-ion migration during HLS, [34][35][36] further aiding the recovery process on the moderately damaged grain boundaries and grain surface. However, in the case of high uence irradiation applied to the Cs-treated sample (HLS-p-Cs2), the effectiveness of the repair process from HLS seems to be reduced, suggesting that high dosage proton irradiation might induce irreparable damage of the CIGS absorber and the Cs-containing compound.…”

Ag‐Dependent Behavior Threshold and Metastability in Wide‐Gap (Ag,Cu)(In,Ga)Se2Solar Cells

“…Light soaking-induced doping increases can reduce J SC , especially in devices with low diffusion lengths. [20,28,29] Dark storage or a short dark anneal at relatively low temperatures (often 85 °C) is used to return devices to the relaxed state. [19] One of the most commonly invoked theories to explain this metastable behavior is the (V Se -V Cu ) divacancy model proposed by Lany and Zunger.…”

“…[28] With regard to doping responsivity, our past results indicate very minimal depletion width variations in 0.75GGI CIGS and although literature details the response of doping to annealing and light soaking, the magnitude of the change in depletion width is generally much less than observed in Type-2 devices. [17,[28][29][30]32] CIGS is known to have high tolerance of off-stoichiometry and the best devices are grown Cu poor to avoid CuSe secondary phases that compromise the interface for stoichiometric and overstoichiometric compositions. [35] Although there are variations in the performance of CIGS devices with varying off-stoichiometry, they are not large within the 0.8 < I/III < 0.9 region.…”

Surface Engineering of Submicron Cu(In,Ga)Se2for High-Efficient Zn(O,S)-Based Solar Cells with Lower Light Soaking Effects

“…CIGS solar cells with Zn­(O,S) buffers, unlike CdS-based devices, exhibit a pronounced metastable effect, known as light soaking (LS), and the device parameters, such as fill factor (FF), open circuit voltage ( V OC ), and short circuit current density ( J SC ) peak, remain stable after a period of illumination and degenerate gradually in the dark environment. ,− Although the metastable behavior of Zn­(O,S)/CIGS devices has no direct influence on device performance, additional stabilizing processes are required to test the module power rating, eventually complicating the module manufacturing process, making the overall system design uncertain, and reducing market competitiveness. In that case, it is critical to mitigate the metastable effect of the Zn­(O,S)-based CIGS devices.…”