Heat and mass transfer characteristics of three-dimensional bell-shaped polysilicon chemical vapor deposition reactor

An, Lisha; Lei, Xiangshu; Qi, Xin; Fang, Ming; Liu, Yingwen

doi:10.1007/s10973-020-09465-6

Cited by 6 publications

(3 citation statements)

References 17 publications

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“…They analyze the distributions of velocity, temperature, and concentrations of key components, as well as the silicon deposition rate. The study finds that higher inlet velocities lead to more uniform distributions and better deposition performance, providing insights for reactor design optimization [122].…”

Section: Coupled Heat and Mass Transfer Equationsmentioning

confidence: 86%

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Łach,

Svyetlichnyy

2024

Preprint

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Chemical vapor deposition (CVD) is a vital process for depositing thin films of various materials with precise control over thickness, composition, and properties. Understanding the heat and mass transfer mechanisms during CVD is essential for optimizing process parameters and ensuring high-quality film deposition. This review provides an overview of recent advancements in the heat and mass transfer modeling for chemical vapor deposition processes. It explores innovative modeling techniques, recent research findings, emerging applications, and challenges in the field. Additionally, it discusses future directions and potential areas for further advancement in CVD modeling.

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Section: Coupled Heat and Mass Transfer Equationsmentioning

confidence: 86%

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Łach,

Svyetlichnyy

2024

Preprint

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show abstract

“…These include horizontal single-wafer reactors, [6][7][8] multi-wafer planetary reactors, [9][10][11] vertical rotary reactors, [12][13][14] and bell jar reactors. [15][16][17][18][19] Habuka et al [20][21][22][23][24] conducted numerical simulations and experimental studies to analyze the growth rate of Si epitaxial films in a horizontal singlewafer reactor operated under atmospheric pressure and temperatures ranging from 1073 to 1398 K. They developed the reaction mechanism to explain the component transport and surface chemical reaction simultaneously. Subsequently, a numerical model was employed to investigate the silicon epitaxial growth rate of the TCS-H 2 system in a vertically stacked multiwafer reactor equipped with over 100 substrates featuring horizontal intake nozzles.…”

Section: Introductionmentioning

confidence: 99%

“…These include horizontal single‐wafer reactors, [ 6–8 ] multi‐wafer planetary reactors, [ 9–11 ] vertical rotary reactors, [ 12–14 ] and bell jar reactors. [ 15–19 ] Habuka et al. [ 20–24 ] conducted numerical simulations and experimental studies to analyze the growth rate of Si epitaxial films in a horizontal single‐wafer reactor operated under atmospheric pressure and temperatures ranging from 1073 to 1398 K. They developed the reaction mechanism to explain the component transport and surface chemical reaction simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

Li,

Jiang

et al. 2024

Cryst. Res. Technol.

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Silicon epitaxy is a crucial process used in semiconductor manufacturing to deposit high‐quality films of silicon. This technique is widely used in the production of integrated circuits, as it enables the fabrication of intricate electronic structures with enhanced performance characteristics. This study conducts numerical simulations on a chemical vapor deposition (CVD) reactor to explore the impact of process parameters on the growth rate and non‐uniformity of silicon. The investigation encompasses both the gas and surface reactions of the trichlorosilane‐hydrogen (TCS‐H2) system. The distributions of gas flow velocity, temperature, and main components are systematically studied by varying the process parameters, including susceptor temperature, inlet gas velocity, susceptor rotating speed, inlet gas temperature, upper wall temperature, and TCS mole fraction. Furthermore, the orthogonal test method is introduced to assess the effect of all parameters on the growth non‐uniformity. The results reveal that the inlet gas velocity and susceptor temperature have a significant influence on the growth rate and non‐uniformity. The silicon growth rate is primarily influenced by the TCS mole fraction, whereas the rotation speed of the substrate primarily influences the growth non‐uniformity of growth. Finally, the optimal scheme is proposed as valuable guidance for enhancing silicon chemical vapor deposition processes in industrial applications.

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A revisit from CVD kinetics to CVD reactor: Investigating uniform growth mechanism of polysilicon in a reduction furnace

Si,

Wang,

Zong

et al. 2024

Chemical Engineering Science

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Heat and mass transfer characteristics of three-dimensional bell-shaped polysilicon chemical vapor deposition reactor

Cited by 6 publications

References 17 publications

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Recent Progress in Heat and Mass Transfer Modeling for Chemical Vapor Deposition Processes

Analysis of Influencing Factors on Silicon Epitaxial Growth in Horizontal Single‐Wafer Reactor through Orthogonal Test

A revisit from CVD kinetics to CVD reactor: Investigating uniform growth mechanism of polysilicon in a reduction furnace

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