Heat dissipation design and analysis of high power LED array using the finite element method

Thermal investigation of LED array with multiple packages based on the superposition method

“…The thermal model of the LED array was built using a threedimensional finite element simulation with ANSYS12.1 software [7]. The LED array model has the same dimensions as the real modules.…”

“…However, while the thermocouples were located next to the chip module and the IR camera obtained the surface temperature of the chip module, the results were always taken at a small distance from the actual heat generation points. Long [6] and Cheng et al [7] used digital simulation or physical modeling to predict the temperature distributions of LED arrays, but did not obtain the measured data. The transient measurement method is a modern method used to measure the transient forward voltage with temperature rise or fall to evaluate thermal resistance [8,9].…”

Synergetic Effect between Lighting Efficiency Enhancement and Building Energy Reduction Using Alternative Thermal Operating System of Indoor LED Lighting

“…at a chip level to increase the light extraction efficiency [12,13]. Furthermore, in high-power LEDs, nearly 25% of the input power is converted to light, while the rest is dissipated in the form of heat, causing the light extraction efficiency, emission intensity, and lifetime to decrease [14][15][16][17]. Therefore, at a system level, the thermal management of high-power LEDs is an essential research area and development involving printed circuit boards for a direct thermal path to the heat sink and an active cooling method with a fan that spreads the heat to the ambient environment [18][19][20].…”

Degradation behaviors of GaN light-emitting diodes under high-temperature and high-current stressing

“…The degradation and failure result from many causes. It can be due to the metal migration or wear-out of the metal contact and solder [5][6][7][8][9]; it can be due to the yellowing of phosphor reflector [9][10][11]; and it can also be due to the defect generation in the device's active region [7,[12][13][14][15][16][17][18]. Various measures are generally needed to overcome the different failure mechanisms.…”