Heat resistance of cadmium telluride devices in variable temperature fire

Abstract

В статье на основе экспериментальных и теоретических исследований рассматриваются физико-химические превращения в теллуриде кадмия в условиях линейного и кратковременного нелинейного (импульсного) теплового воздействия, устанавливаются некоторые особенности работы приборов и устройств на основе теллурида кадмия внутри зон теплового воздействия при возгораниях и техногенных пожарах. На основе усовершенствованной математической модели приведены результаты образования и эволюции дефектной сети, приводящей под действием различных теплодоз процесса горения к деградации оборудования. The scientific article contains an experimental and theoretical study of cadmium telluride (CdTe) under conditions of linear and pulsed (nonlinear) thermal effects occurring in zones of man-made fires of varying intensity. The experimental part of the work is devoted to the study by transmission electron microscopy methods of the defective network of CdTe samples, which is a part of thin-film solar cells, universal infrared detectors and other devices exposed to heat from 100 to 800 °C. The theoretical part presents an improved mathematical model describing the evolution of chiselled defects under conditions of increasing temperature over time, both in linear form – an increase of 1 °C degree in 1 second, and in pulse form – a sharp increase to 100 °C and a subsequent drop to room temperature. Based on the results obtained, the presence of active physic-chemical transformations in the material was confirmed after receiving the appropriate heat dose, it was found that the temperature up to 100 °C, including with pulsed exposure, although it leads to an increase in the defective network, allows the equipment to remain operational. At temperatures above 600 °C, the degradation of the material leads to failures in the operation of devices and devices based on cadmium telluride, which makes their use limited and extremely inefficient in extreme conditions, where conventional semiconductor materials, such as germanium, are more suitable.