Heat Transfer Characteristics of High Power Semiconductor Laser with Graphite Sheet as Auxiliary Heat Sink

Junyu, 房俊宇 Fang; Lin-lin, 石琳琳 Shi; He, 张贺 Zhang; Zhikun, 杨智焜 Yang; Yingtian, 徐英添 Xu; Li, 徐 莉 Xu; Xiaohui, 马晓辉 Ma

doi:10.3788/fgxb20194007.0907

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“…The measured thermal resistance value of SiC devices was 14.7% lower than that of AlN devices. In 2019, Junyu Fang et al [7] proposed a packaging structure using high thermal conductivity graphite sheets as auxiliary heat sinks. Compared with the traditional structure of copper tungsten alloy as transition heat sink, this packaging structure reduces the active zone temperature by 4.5K and thermal resistance by 0.45K/W.…”

Section: Introductionmentioning

confidence: 99%