Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells

Belykh, V. V.; Kochiev, M. V.

doi:10.1103/physrevb.92.045307

Cited by 11 publications

(3 citation statements)

References 52 publications

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“…The experimental determination of the radiative characteristics is widespread, see, e.g., Refs. [10,[31][32][33][34][35] and references therein. Recent measurements of the radiative decay rate have been carried out by Poltavtsev et al, see Refs.…”

Section: Introductionmentioning

confidence: 99%

Radiative decay rate of excitons in square quantum wells: Microscopic modeling and experiment

Khramtsov

Belov

Grigoryev

et al. 2016

Journal of Applied Physics

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The binding energy and the corresponding wave function of excitons in GaAs-based finite square quantum wells (QWs) are calculated by the direct numerical solution of the three-dimensional Schrödinger equation. The precise results for the lowest exciton state are obtained by the Hamiltonian discretization using the high-order finite-difference scheme. The microscopic calculations are compared with the results obtained by the standard variational approach. The exciton binding energies found by two methods coincide within 0.1 meV for the wide range of QW widths. The radiative decay rate is calculated for QWs of various widths using the exciton wave functions obtained by direct and variational methods. The radiative decay rates are confronted with the experimental data measured for high-quality GaAs/AlGaAs and InGaAs/GaAs QW heterostructures grown by molecular beam epitaxy. The calculated and measured values are in good agreement, though slight differences with earlier calculations of the radiative decay rate are observed.

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Section: Introductionmentioning

confidence: 99%

Radiative decay rate of excitons in square quantum wells: Microscopic modeling and experiment

Khramtsov

Belov

Grigoryev

et al. 2016

Journal of Applied Physics

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“…An exciton can emit if its total wave vector lies within the light cone |k| < ω/c (where ω is the photon frequency) and, therefore, its kinetic energy is close to zero. In thermal equilibrium, the exciton energies are distributed in the range of ∼ k B T , and the decay time of the total exciton concentration can be estimated as τ ∼ τ 0 k B T /( 2 ω 2 /2mc 2 ) ≫ τ 0 [47], where m ≈ 0.8m 0 is the exciton mass [22] and m 0 is the free electron mass. This explains the rather long PL dynamics and the increase in the characteristic PL decay time with increasing temperature.…”

Section: Linear Model Of the Nonexponential Dynamicsmentioning

confidence: 99%

Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

Akmaev,

Kochiev,

Duleba

et al. 2020

Preprint

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The spectral and spatiotemporal dynamics of photoluminescence in monolayers of transition metal dichalcogenide WSe2 obtained by mechanical exfoliation on a Si/SiO2 substrate is studied over a wide range of temperatures and excitation powers. It is shown that the dynamics is nonexponential and, for times t exceeding ∼50 ps after the excitation pulse, is described by a dependence of the form 1/(t + t0). Photoluminescence decay is accelerated with a decrease in temperature, as well as with a decrease in the energy of emitting states. It is shown that the observed dynamics cannot be described by a bimolecular recombination process, such as exciton-exciton annihilation. A model that describes the nonexponential photoluminescence dynamics by taking into account the spread of radiative recombination times of localized exciton states in a random potential gives good agreement with experimental data.

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“…Since quantum dots emitting around 1300 nm are physically larger and have a higher In-composition than shorter wavelength quantum dots, the different composition and morphology can result in a different wavefunction extensions and electron-hole overlap, impacting their fundamental response to applied fields. In this direction, analysis of the emission properties of quantum dots emitting at wavelengths > 1.2 µm in the presence of an external magnetic field [17][18][19] and of 1300 nm quantum dots in the presence of external strain [11] have been reported. However, the full characterisation of the fundamental properties of quantum dots allowing direct comparison of emitters at 950 nm and at telecom wavelengths is still incomplete.…”

Section: Introductionmentioning

confidence: 99%

Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

et al. 2016

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We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic fields. We extract the physical properties of the electron and hole wavefunctions, including the confinement energies, interaction energies, wavefunction lengths, and g-factors. For excitons, we measure the permanent dipole moment, polarizability, diamagnetic coefficient, and Zeeman splitting. The carriers are determined to be in the strong confinement regime. Large range electric field tunability, up to 7 meV, is demonstrated for excitons. We observe a large reduction, up to one order of magnitude, in the diamagnetic coefficient when rotating the magnetic field from Faraday to Voigt geometry due to the unique dot morphology. The complete spectroscopic characterization of the fundamental properties of longwavelength dot-in-a-well structures provides insight for the applicability of quantum technologies based on quantum dots emitting at telecom wavelengths.

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Heating by exciton and biexciton recombination in GaAs/AlGaAs quantum wells

Cited by 11 publications

References 52 publications

Radiative decay rate of excitons in square quantum wells: Microscopic modeling and experiment

Radiative decay rate of excitons in square quantum wells: Microscopic modeling and experiment

Nonexponential photoluminescence dynamics in an inhomogeneous ensemble of excitons in WSe$_2$ monolayers

Magneto-optical spectroscopy of single charge-tunable InAs/GaAs quantum dots emitting at telecom wavelengths

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