Heavily doped <i>p</i>-GaAs grown by low-pressure organometallic vapor phase epitaxy using liquid CCl4

Yang, Ling; Wright, P. D.; Eu, V.; Lu, Z. H.; Majerfeld, A.

doi:10.1063/1.351637

Cited by 67 publications

(18 citation statements)

References 13 publications

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“…The luminescence properties are dependent on the growth conditions (or methods), impurity species, doping concentrations and growth temperatures. PL spectroscopy has also been employed to investigate the Fermi level of heavily n-type doped materials [6,10], the carrier concentration [27] and the epitaxial layer quality [28]. The effect of growth parameters, such as SiH 4 mole fraction, growth temperature, arsine (AsH 3 ) and trimethylgallium (TMGa) mole fractions on Si incorporation in GaAs are investigated thoroughly and these results are compared with the published literatures [5,[29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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Silane (SiH 4 ) was used as an n-type dopant in GaAs grown by low pressure metalorganic vapor phase epitaxy using trimethylgallium (TMGa) and arsine (AsH 3 ) as source materials. The electron carrier concentrations and silicon (Si) incorporation efficiency are studied by using Hall effect, electrochemical capacitance voltage profiler and low temperature photoluminescence (LTPL) spectroscopy. The influence of growth parameters, such as SiH 4 mole fraction, growth temperature, TMGa and AsH 3 mole fractions on the Si incorporation efficiency have been studied. The electron concentration increases with increasing SiH 4 mole fraction, growth temperature, and decreases with increasing TMGa and AsH 3 mole fractions. The decrease in electron concentration with increasing TMGa can be explained by vacancy control model. The PL experiments were carried out as a function of electron concentration (10 17 −1.). The PL main peak shifts to higher energy and the full width at half maximum (FWHM) increases with increasing electron concentrations. We have obtained an empirical relation for FWHM of PL,. We also obtained an empirical relation for the band gap shrinkage, DE g in Si-doped GaAs as a function of electron concentration. The value of DE g (eV) = −2.75×10 − 8 n 1/3 , indicates a significant band gap shrinkage at high doping levels. These relations are considered to provide a useful tool to determine the electron concentration in Si-doped GaAs by low temperature PL measurement. The electron concentration decreases with increasing TMGa and AsH 3 mole fractions and the main peak shifts to the lower energy side. The peak shifts towards the lower energy side with increasing TMGa variation can also be explained by vacancy control model.

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Section: Introductionmentioning

confidence: 99%

Si incorporation and Burstein–Moss shift in n-type GaAs

Hudait

Modak

Krupanidhi

1999

Materials Science and Engineering: B

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“…The carbon-doping profiles were abrupt, and there was no indication of a dopant memory effect, as is commonly found with other p-type dopants, such as magnesium and zinc. The carbon incorporation increased with increasing CC1, molar Yang et al used a liquid CC14 doping source which allowed high CC14 molar flow rates without excessively increasing the flow rate of the CCl 4 gas source [50].…”

Section: Extrinsic Carbon Dopingmentioning

confidence: 99%

“…The hole concentration is given in Fig. 8 as a function of the CC14 molar flow [50]. A maximum hole concentration of 1.2 • 102o cm-3 was obtained (Tg = 600~…”

Section: Extrinsic Carbon Dopingmentioning

confidence: 99%

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Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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“…Compared to other p-type dopants such as Mg, Zn, and Be, carbon possesses unique advantages, e.g., less memory effect [1], smaller diffusion coefficient [2] and higher free hole density [3,4]. C-doped AlGaAs/GaAs have been obtained by metal-organic chemical vapor deposition (MOCVD) using extrinsic doping precursors such as carbon tetrachloride (CCl 4 ) [3,5] and carbon tetrabromide (CBr 4 ) [6,7].…”

Section: Introductionmentioning

confidence: 99%