Heavy carbon atomic-layer doping at Si1−Ge /Si heterointerface

Hirano, Tomoya; Sakuraba, Masao; Tillack, Bernd; Murota, Junichi

doi:10.1016/j.tsf.2009.10.093

Cited by 14 publications

(16 citation statements)

References 16 publications

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“…It is suggested that, for in situ B-doped Si epitaxial growth, the substitutional B and the interstitial B concentrations in the unstrained Si are higher and lower than those on tensile-strained Si, respectively. It was confirmed that the intermixing at the Si/Si 1−x Ge x /Si heterointerface is suppressed by carbon atomic-layer doping at the heterointerface for the heat-treatment for 3 h at 650 • C [13]. In the case of 40 nm thick strained Si 0.55 Ge 0.45 /Si, the strain amount is reduced by the carbon atomic-layer doping of (1-3)×10 14 cm −2 at the heterointerface and the reduction becomes larger with the heat treatment.…”

Section: Atomic Layer Doping In Si 1−x Ge X Epitaxial Growthmentioning

confidence: 87%

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

Murota

Sakuraba

Tillack

2012

Adv. Nat. Sci: Nanosci. Nanotechnol.

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One of the main requirements for ultra-large-scale integrations (ULSIs) is atomic-order control of process technology. Our concept of atomically controlled processing is based on atomic-order surface reaction control by CVD. By ultraclean low-pressure CVD using SiH 4 and GeH 4 gases, high-quality low-temperature epitaxial growth of Si 1−x Ge x (100) (x=0–1) with atomically flat surfaces and interfaces on Si(100) is achieved. Self-limiting formation of 1–3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si 1-x Ge x (100) are generalized based on the Langmuir-type model. By the Si epitaxial growth on top of the material already-formed on Si(100), N, B and C atoms are confined within about a 1 nm thick layer. In Si cap layer growth on the P atomic layer formed on Si 1−x Ge x (100), segregation of P atoms is suppressed by using Si 2 H 6 instead of SiH 4 at a low temperature of 450 °C. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the Si 1−x Ge x /Si heterointerface. It is confirmed that higher carrier concentration and higher carrier mobility are achieved by atomic-layer doping. These results open the way to atomically controlled technology for ULSIs.

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Section: Atomic Layer Doping In Si 1−x Ge X Epitaxial Growthmentioning

confidence: 87%

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

Murota

Sakuraba

Tillack

2012

Adv. Nat. Sci: Nanosci. Nanotechnol.

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“…The growing temperature and the carbon doping in the Si protective film may be used to regulate the combination of Si and Ge. 104 This study evaluated the contact resistance (Ni silicide contacts), the amount of Ge, and the carbon doping in the Si barrier for five distinct structures (MQW1, MQW2, MQW3, MQW4, and MQW5). The prototypes displayed exemplary TCR of 4.5% K −1 for 100 × 100 μm 2 pixel dimensions and low noise constant (k 1/f ) values of 4.4 × 10 −15 .…”

Section: Vanadium Oxide (Vo X )mentioning

confidence: 99%

Recent Developments in Wearable NEMS/MEMS-Based Smart Infrared Sensors for Healthcare Applications

Padha,

Yadav,

Dutta

et al. 2023

ACS Appl. Electron. Mater.

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Incorporating nano-and microelectromechanical systems (NEMS/MEMS)-based sensors in clothing and developing more compact and flexible devices have gained popularity recently. NEMS/MEMS-based bolometers/sensors have gained significance due to their high sensitivity and accuracy in measuring physical parameters such as temperature, humidity, pressure, and infrared (IR) and ultraviolet (UV) radiations. When worn on the body, bolometers can be employed in various applications such as environmental monitoring or health tracking. This review highlights the progress of smart wearable bolometers as NEMS/ MEMS-based sensors in the healthcare industry. Instead of visiting multiple healthcare facilities or devices, now people can assess their health status by measuring body temperature, sensing motion, respiratory functioning, blood pressure, oxygen levels of the blood, and heart functioning by integrating these devices into fabriclike garments, socks, shoe insoles, wrist watches, and other pieces of clothing. The article concludes by describing their varied challenges and possible solutions and prospects.

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“…UV Raman scattering measurement results indicate the influence of C atomic-layer doping on the strain relaxation and the intermixing between Si and Ge for thin and thick Si 0 55 Ge 0 45 cap layer on Si(100) as shown in Figure 8. 32 Figure 8. In this case, by the intermixing between Si and Ge, the cap layer thickness increases and Ge fraction is reduced in the cap layer, and as a result the strain comes to be relaxed.…”

Section: Carbon Atomic-layer Doping Inmentioning

confidence: 99%

Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth

Murota

Sakuraba

Tillack

2011

J. Nanosci. Nanotech.

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One of the main requirements for Si-based ultrasmall device is atomic-order control of process technology. Here, we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control in Si-based CVD epitaxial growth. Self-limiting formation of 1-3 atomic layers of group IV or related atoms after thermal adsorption and reaction of hydride gases on Si(1-x)Gex(100) (x = 0-1) surface are generalized based on the Langmuir-type model. Moreover, Si-based epitaxial growth on N, P or C atomic layer formed on Si(1-x)Gex(100) surface is achieved at temperatures below 500 degrees C. N atoms of about 4 x 10(14) cm(-2) are buried in the Si epitaxial layer within about 1 nm thick region. In the Si(0.5)Ge(0.5) epitaxial layer, N atoms of about 6 x 10(14) cm(-2) are confined within about 1.5 nm thick region. The confined N atoms in Si(1-x)Gex preferentially form Si-N bonds. For unstrained Si cap layer grown on top of the P atomic layer formed on Si(1-x)Gex(100) with P atomic amount of below about 4 x 10(14) cm(-2) using Si2H6 instead of SiH4, the incorporated P atoms are almost confined within 1 nm around the heterointerface. It is found that tensile-strain in the Si cap layer growth enhances P surface segregation and reduces the incorporated P atomic amount around the heterointerface. Heavy C atomic-layer doping suppresses strain relaxation as well as intermixing between Si and Ge at the nm-order thick Si(1-x)Gex/Si heterointerface. These results open the way to atomically controlled technology for ULSIs.

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Heavy carbon atomic-layer doping at Si1−Ge /Si heterointerface

Cited by 14 publications

References 16 publications

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

Atomically controlled CVD processing of group IV semiconductors for ultra-large-scale integrations

Recent Developments in Wearable NEMS/MEMS-Based Smart Infrared Sensors for Healthcare Applications

Atomically Controlled Processing in Silicon-Based CVD Epitaxial Growth

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