Heavy carbon doping of metalorganic chemical vapor deposition grown GaAs using carbon tetrachloride

Abstract

Characterization of heavily carbondoped GaAs grown by metalorganic chemical vapor deposition and metalorganic molecular beam epitaxy

Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs

“…A nonlinear power-law dependence of the electrical compensation on the DEALO mole fraction is again noted, as in the case of n-type GaAs. The results from a second similar sample grown with a higher carbon concentration at 9.73ϫ10 17 cm Ϫ3 are also shown in Fig. 9.…”

“…3 for this Se-doped sample. The results from a second similar sample grown with a lower Se concentration at 5.14ϫ10 17 cm Ϫ3 are also shown in Fig. 3.…”

“…9. These samples 17 , and 4.3ϫ10 17 cm Ϫ3 , respectively. Similar multiple deep level structures are noted for all cases, and spectra peak heights are found to be approximately proportional to ⌬ (N d ϪN a ).…”

“…8 for a carbon and oxygen co-doped multilayer GaAs sample. The carbon concentration for this sample, obtained from SIMS measurements, is constant throughout at 2.9ϫ10 17 cm Ϫ3 with step changes in the oxygen concentrations. The carbon doping efficiency from CCl 4 is therefore not altered by the presence of DEALO.…”

Carbon doping of III-V compound semiconductors

“…The diffusion coefficient of C is, in general, at least one order of magnitude smaller than that of any group II acceptor in GaAs. Reference Abernathy, et al, 1989Saito, et al, 1988Kobayashi, et al, 1987Cunningham et a!., 1989Kuech, et a!., 1987Enquist, et a!., 1988Enquist, et al, 1988McLevige, et al, 1978lie gems, 1977Saito, et al, 1988 The local vibrational mode (L VM) of CAs was first reported by Newman. (Newman, et al, 1972) At 4K the CAs LVM appears at 583 cm-1.…”