Heavy doping effects in silicon

Overstraeten, R.J. Van; Mertens, R.

doi:10.1016/0038-1101(87)90070-0

Cited by 71 publications

(32 citation statements)

References 27 publications

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“…However, the absorbance intensity for the 3 and 5% Mn-doped CeO 2 sample were found to decrease when compared to the undoped CeO 2 sample. This may be due to the electron-electron, electron-donor atom and electronhole interactions which increase drastically as doping is increased beyond a critical limit 29,30 . These interactions dominate the electron-photon interactions.…”

Section: Resultsmentioning

confidence: 99%

Synthesis, Characterization, and Photocatalytic Properties of Flower-like Mn-doped Ceria

Zhang

et al. 2018

Mat. Res.

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Mn-doped CeO 2 flower-like microstructures have been synthesized by a facile one-step compositehydroxide-mediated method. The structure, morphology, optical and the surface properties of Mn doped CeO 2 have been investigated by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM), UV-Vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). The XRD results confirmed the successful incorporation of Mn into the CeO 2 lattice through the formation of face-centered cubic solid solution. The photocatalytic activities of the catalysts were evaluated by measuring the photodegradation efficiency of Rhodamine B (RhB) under ultraviolet light irradiation. With an optimal molar ratio of 1% in Mn/CeO 2 the highest rate photodegradation was achieved under the experimental conditions. The enhanced photocatalytic activity can be attributed to the incorporation of multivalent Mn in CeO 2 promoted the separation of photogenerated charges, inhibited the recombination of photogenerated carriers, and thus prolonged the charges lifetime to participate in the photocatalytic reaction.

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Section: Resultsmentioning

confidence: 99%

Synthesis, Characterization, and Photocatalytic Properties of Flower-like Mn-doped Ceria

Zhang

et al. 2018

Mat. Res.

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“…We use appropriate assumptions and approximations such bulk phonon deformation potential scattering [24,25,26], uniformity in the doping profile and the resultant electrostatic potential, and rigid Si electronic bandstructures independent of doping. High doping and carrier concentrations could cause bandgap narrowing [27], but our results do not depend on the bandgap itself, rather on the position of the Fermi level with respect to the valence band. however, is strongly degraded as the carrier concentration increases.…”

mentioning

confidence: 86%

Gated Si nanowires for large thermoelectric power factors

Neophytou

Kosina

2014

Applied Physics Letters

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We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20nm in diameter in the [100], [110] and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ~5x larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20nm diameters, (the largest ones that we were able to simulate), a ~3x higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ~40nm.

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“…The defect states in the band gap also influence the E g values. This is a well-documented phenomenon (for Si) [54], even if the precision in a detailed quantitative understanding may be lacking. We have reported that the maximum of the Seebeck coefficient of ZnSb could be varied considerably by the presence of defect states in the band gap [52].…”

Section: Experimental Band Gapmentioning

confidence: 99%

Review of Research on the Thermoelectric Material ZnSb

Song¹,

Finstad²

2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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The thermoelectric material ZnSb has been studied intensively in recent years and has shown promising features. The other zinc-antimonide compound, Zn 4 Sb 3 has remarkable low thermal conductivity, but it is accompanied with phase transitions at moderate temperature and has inherent stability problems. Compared to that, ZnSb is relatively phase stable and has a relative high charge carrier mobility and Seebeck coefficient, thus yielding a decent power factor. Meanwhile, its thermal conductivity can be reduced by means of nanostructuring, thus giving a good figure of merit at moderate temperatures, 400-600K. Many researchers have dedicated their efforts to study and improve ZnSb properties, and the figure of merit has been reported to be above one. Still, ZnSb as a thermoelectric material has features and behaviours that are not well-understood. The behaviour and properties of its intrinsic defects are not understood, but have interested researchers in recent years. This chapter intends to offer a comprehensive review on ZnSb to the readers. By combining own experiences from research on thermoelectric materials, the authors address the prospect for improving the thermoelectric properties of ZnSb and the concerns of transferring lab results to manufacturing.

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Heavy doping effects in silicon

Cited by 71 publications

References 27 publications

Synthesis, Characterization, and Photocatalytic Properties of Flower-like Mn-doped Ceria

Synthesis, Characterization, and Photocatalytic Properties of Flower-like Mn-doped Ceria

Gated Si nanowires for large thermoelectric power factors

Review of Research on the Thermoelectric Material ZnSb

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