Heavy ion action on biological systems

Kiefer, Jürgen; Brend'amour, Mathias; Stoll, U.

doi:10.1016/0168-583x(95)01035-1

Cited by 7 publications

(2 citation statements)

References 14 publications

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“…It has been reported that ionizing radiations could cause a large variety of changes in the essential components of cells [26]. According to SONG Daojun [27], the 'moment etching channels' would be formed due to the action of a large number of successively implanted ions, and connected to DNA.…”

Section: Discussionmentioning

confidence: 99%

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

et al. 2006

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In order to generate a mutant of Bacillus subtilis with enhanced surface activity through low energy nitrogen ion beam implantation, the effects of energy and dose of ions implanted were studied. The morphological changes in the bacteria were observed by scanning electron microscope (SEM). The optimum condition of ions implantation, 20 keV of energy and 2.6 X 1015N+/cm2 in dose, was determined. A mutant, B.s-E-8 was obtained, whose surface activity of 50-fold and 100-fold diluted cell-free Landy medium was as 5.6-fold and 17.4-fold as the wild strain. The microbial growth and biosurfactant production of both the mutant and the wild strain were compared. After purified by ultrafiltration and SOURCE 15PHE, the biosurfactant was determined to be a complex of surfactin family through analysis of electrospray ionization mass spectrum (ESI/MS) and there was an interesting finding that after the ion beam implantation the intensities of the components were different from the wild type strain.

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Section: Discussionmentioning

confidence: 99%

A Mutant of Bacillus Subtilis with High-Producing Surfactin by Ion Beam Implantation

et al. 2006

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“…It had been reported that ionizing radiation could cause a large variety of changes in essential components of cell (Kiefer et al 1996). In this study, five types of mutant strains (defined as mutant type A, B, C, D, and E strains) were obtained at an energy level of 20 KeV and dose of 2.34 x 10 15 ions/cm 2 , which showed a lot of differences from the wild type strain in colony morphology (Figure 4).…”

Section: Mutagenic Effects Induced By Nitrogen Ion Beam Implantationmentioning

confidence: 99%

Enhancement of wanlongmycin production by nitrogen ion beam implantation

Lin¹,

Zhang²,

Gao³

et al. 2010

Electro Journal of Biotech

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In an attempt to obtain an industrial strain with higher yield of wanlongmycin, the wild strain Streptomyces griseovariabilis GAAS2507 was mutated by a novel mutagen, nitrogen ion beam with energy of 20 kilo electron volts (KeV) and dose ranging from 7.80 x 10 14 to 2.86 x 10 15 ions/cm 2 . One mutant strain WN939 was obtained. Its yield of wanlongmycin reached 271.24 µg/mL, which was 82.10% higher than that of the wild strain. The mutant strain WN939 was relatively stable for the production of wanlongmycin through six successive transfers of cultures and a repeat fermentation in a 30 L fermentor. In addition, the mutant strains were investigated and divided into five types by their colony phenotypes and production of wanlongmycin. Among them, three types mutant strains exhibited positive mutation, while the other two types mutant strains exhibited negative mutation.

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