Heavy ion beam micromachining on LiNbO3

Nesprías, F.; Venturino, M.; Debray, M. E.; Davidson, J.; Davidson, M.; Kreiner, Andrés J.; Minsky, D.M.; Fischer, Martin C.; Lamagna, A.

doi:10.1016/j.nimb.2008.10.083

Cited by 21 publications

(13 citation statements)

References 36 publications

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“…Previous studies [1] show that using fluences of 5 × 10 12 ions/cm 2 of Cl 35 at 70 MeV generate lattice damage in a way that the etching rate in an HF (50%) acid increases drastically. We used a similar projectile as in [4,5], a 5 µm beam spot of 32 S 8+ at 75 MeV energy and 250 × 250 µm 2 scanned area. The electrostatic deflector was used to reduce the flux using a pulse width modulation (PWM) signal phased with a triangular (sawtooth) signal.…”

Section: Radiation Damage In Linbo 3 Applying the Constant Gradient Tmentioning

confidence: 99%

“…It is one of the experimental lines of the Tandar 20UD Pelletron accelerator and comprises Oxford Microbeams Ltd. (Oxfordshire, UK) OM55 triplet of magnetic quadrupoles. It was originally set up for micro-PIXE (micro-particle induced X-Ray emission) [1][2][3] elemental analysis and micromachining [4,5]. Recently, it was employed in SEE (single event effects) testing, IBIC/TRIBIC (ion beam induced charge/time-resolved IBIC) measurements and total dose studies of semiconductors [6].…”

Section: Introductionmentioning

confidence: 99%

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Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Vega

Müller

Fournière

et al. 2019

QuBS

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Recently we used the heavy ion microprobe of the Buenos Aires TANDAR Laboratory for Single Event Effects (SEE) and Total Dose (TD) experiments in electronics devices and components, requiring very low beam currents. The facility includes a fast beam switch that allows the control of the ion beam current and a mobile Si PIN (p-type, intrinsic, n-type) diode that directly measures the number of ions hitting the device. The fast beam deflector was used to reduce the current by producing a pulsed beam or generating a quasi-continuous (Poisson-like distributed) beam with currents ranging from tens to hundreds of ions/s. As an application for this current control method we present a single event effect (SEE) pulses map generated by a 32S8+ beam at 75 MeV on two 0.5 µm technology CMOS digital output buffers where the device was formed by cascading four CMOS inverters with increasing sizes from input to output to drive large loads. Using the same concept of pulse width modulated deflection, we developed a novel gradient scanning method. This system allows to produce in a single irradiation a distribution with a cumulative damage with a difference of two orders of magnitude at constant gradient. To demonstrate the method, we irradiated a lithium niobate monocrystal with 32S8+ beam at 75 MeV energy and later analyzed the produced damage by the micro-Raman technique and an optical profilometer.

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Section: Radiation Damage In Linbo 3 Applying the Constant Gradient Tmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Vega

Müller

Fournière

et al. 2019

QuBS

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“…As an example of recent studies on heavy ion physics, broadarea ion-beam enhanced etching (IBEE) of LiNbO 3 using electronic-excitation damage from heavy-ion irradiation has been proposed and demonstrated as a possible alternative [3,4]. In this case, etching is enabled by the presence of high density of irradiation-induced defects, resulting in an amorphous-like damaged layer.…”

Section: Introductionmentioning

confidence: 99%

Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

et al. 2015

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a b s t r a c tThe induced selective etching properties of LiNbO 3 in a sample subjected to ion processing using sequential light-and heavy-ion irradiation are investigated and discussed. Through the use of TEM and SEM, the lattice structure at the amorphous-crystalline interface is examined after heavy ion exposure and it is found that single-energy amorphizing irradiation results in undercut etching at the interface, while multiple-energy irradiation yields sharper features. Such sequential-irradiation process based on both lightand heavy-ion irradiation enables ready fabrication of concomitant high-resolution patterning and exfoliation of structured freestanding thin films.

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“…In fact, it is well known that every single ion generates a well-defined amorphous track of nanometre diameter whenever its stopping power is above such a threshold value. These tracks have been observed and investigated by a variety of techniques [16][17][18][19][20][21][22][23][24][25][26][27][28][29] and offer interesting possibilities for nano-structuring and nano-patterning of materials in electronics and photonics [11,[30][31][32]. Although the detailed structure of the tracks is not definitely known for most materials and it may be quite complex, it has been, indeed, observed that it includes a central amorphous core surrounded by an extensive halo containing elastically stressed regions as well as point defects (e.g.…”

Section: Introductionmentioning

confidence: 99%

Elastic (stress–strain) halo associated with ion-induced nano-tracks in lithium niobate: role of crystal anisotropy

Rivera¹,

Garcia²,

Olivares³

et al. 2011

J. Phys. D: Appl. Phys.

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The elastic strain/stress fields (halo) around a compressed amorphous nano-track (core) caused by a single high-energy ion impact on LiNbO 3 are calculated. A method is developed to approximately account for the effects of crystal anisotropy of LiNbO 3 (symmetry 3m) on the stress fields for tracks oriented along the crystal axes (X, Y or Z). It only considers the zero-order (axial) harmonic contribution to the displacement field in the perpendicular plane and uses effective Poisson moduli for each particular orientation. The anisotropy is relatively small; however, it accounts for some differential features obtained for irradiations along the crystallographic axes X, Y and Z. In particular, the irradiation-induced disorder (including halo) and the associated surface swelling appear to be higher for irradiations along the X-or Y -axis in comparison with those along the Z-axis. Other irradiation effects can be explained by the model, e.g. fracture patterns or the morphology of pores after chemical etching of tracks. Moreover, it offers interesting predictions on the effect of irradiation on lattice parameters.

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Heavy ion beam micromachining on LiNbO3

Cited by 21 publications

References 36 publications

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Experimental Setup of the Fast Current Controller for the Buenos Aires Heavy Ion Microbeam

Characterization of selective etching and patterning by sequential light- and heavy-ion irradiation of LiNbO3

Elastic (stress–strain) halo associated with ion-induced nano-tracks in lithium niobate: role of crystal anisotropy

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