2024
DOI: 10.1109/tns.2024.3379458
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Heavy-Ion Effects in SiC Power MOSFETs With Trench-Gate Design

C. Martinella,
S. Race,
N. Für
et al.

Abstract: SiC power MOSFETs with trench-gate structure have been irradiated with heavy-ion broad-beam and microbeam. Microdose effects resulting in higher subthreshold drain leakage were observed when irradiating the devices at low drain-source voltages and reported for the first time for SiC power devices. Increasing the drainsource bias during the exposure, single-event leakage current (SELC), characterized by microbreaks in the gate oxide was measured. The accumulation of microbreaks eventually led to a complete gate… Show more

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