Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Massengill, L.W.; Choi, B.K.; Fleetwood, D.M.; Schrimpf, R.D.; Galloway, K.F.; Shaneyfelt, M.R.; Meisenheimer, T.L.; Dodd, P.E.; Schwank, J.R.; Lee, Y.M.; Johnson, R. S.; Lucovsky, G.

doi:10.1109/23.983149

Cited by 75 publications

(27 citation statements)

References 24 publications

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“…Although the results reported here show that the voltage required for HBD/SEGR is reduced as LET and fluence are increased (confirming earlier reports in thicker oxides [6]- [8]), the field required for the onset of SEGR is outside the range of normal device operation (see also [16]). Future scaling, however, may bring operating voltages into this regime.…”

Section: Discussionsupporting

confidence: 90%

“…There is controversy in the literature [1], [6]- [9], [16] as to whether heavy-ion irradiation will be a threat to gate oxides in scaled devices. Although the results reported here show that the voltage required for HBD/SEGR is reduced as LET and fluence are increased (confirming earlier reports in thicker oxides [6]- [8]), the field required for the onset of SEGR is outside the range of normal device operation (see also [16]).…”

Section: Discussionmentioning

confidence: 99%

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Heavy-ion-induced soft breakdown of thin gate oxides

Conley

Suehle

Johnston

et al. 2001

IEEE Trans. Nucl. Sci.

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Section: Discussionsupporting

confidence: 90%

Section: Discussionmentioning

confidence: 99%

Heavy-ion-induced soft breakdown of thin gate oxides

Conley

Suehle

Johnston

et al. 2001

IEEE Trans. Nucl. Sci.

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“…If a large electric field is applied across the insulator and a heavy ion passes through it, a catastrophic failure known as single event gate rupture (SEGR) can occur [85]. This is a common failure mode for high-voltage MOS transistors in space, but is becoming increasing relevant as CMOS technology scales to smaller features and thinner oxides [86,87].…”

Section: Permanent Damage Effectsmentioning

confidence: 99%

Magnetic Random Access Memory for Embedded Computing

Donohoe¹

2007

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Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing this collection of information. MRAM_II_2007-Final SPONSORING / MONITORING AGENCY NAME(S) AND ADDRESS(ES) 10. SPONSOR/MONITOR'S ACRONYM(S)Air Force Research Laboratory AFRL/RVSE Space Vehicles Directorate 3550 Aberdeen Ave. SE SPONSOR/MONITOR'S REPORTKirtland AFB, NM 87117-5776 NUMBER(S) AFRL-RV-PS-TR-2007-1196 DISTRIBUTION / AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. (Clearance #VS07-0688) SUPPLEMENTARY NOTESThis report is published in the interest of scientific and technical information exchange. The established procedures for editing reports were not followed for this technical report. ABSTRACTThe goal of this research was to develop an embedded magnetic memory technology to be integrated into Complementary Metal Oxide Semiconductor (CMOS) integrated circuit fabrication process to provide radiation-hard, logic elements and small random-access memories. The goal is not to provide largescale, bulk memory, but latches and flip flops that serve as state and data registers for sequential logic, and configuration registers for configurable logic. The benefits to spacecraft systems include the ability to power-down a subsystem while retaining system state, thus saving energy until the subsystem is required. The subsystem can then be powered-up and begin operating in milliseconds. The technology is based on a unique, PacMan-shaped magnetic tunneling junction (MTJ) cell developed at the University of Idaho. The focus of this research is to refine the PacMan cell to make it practical for integration into CMOS circuits, to develop CMOS circuits that employ the magnetic cells, and to integrate the cells onto a CMOS process. The process produced two circuit designs based on magnetic memory elements: a magnetic latch, and a magnetic shadow memory to serve as a backup to volatile electronic memory. ii University of Idaho report MRAM_II_2007-Final SUBJECT TERMS CMOS, MTJ Cell

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“…For metal oxide semiconductors and complementary metal oxide semiconductors (CMOS), the insulating SiO 2 thin layer is used as the gate dielectric, which CONTACT Q. Yang qyang@xtu.edu.cn is vital for surface electrical field control and device isolation. The radiation of high-energy ions can induce charge lose and electrical properties degradation in CMOS by charge injection into the gate dielectric (9)(10)(11)(12). For example, the SHI can produce micro-damage (harderror), which may lead to the data losing in dynamic random access memory (13).…”

Section: Introductionmentioning

confidence: 99%

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

Zhen

Yang

Yan

et al. 2016

Radiation Effects and Defects in Solids

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In this paper, the radiation defects induced by the swift heavy ions and the recoil atoms in amorphous SiO 2 were studied. The energy of recoil atoms induced by the incident Au ions in SiO 2 was calculated by using Monte Carlo method. Results show that the average energies of recoils reach the maximum (200 eV for Si and 130 eV for O, respectively) when the incident energy of Au ion is 100 MeV. Using Tersoff/zbl potential with the newly built parameters, the defects formation processes in SiO 2 induced by the recoils were studied by using molecular dynamics method. The displacement threshold energies (E d ) for Si and O atoms are found to be 33.5 and 16.3 eV, respectively. Several types of under-and over-coordinated Si and O defects were analyzed. The results demonstrate that Si 3 , Si 5 , and O 1 are the mainly defects in SiO 2 after radiation. Besides, the size of cylindrical damage region produced by a single recoil atom was calculated. The calculation shows that the depth and the radius are up to 2.0 and 1.4 nm when the energy of recoils is 200 eV. Finally, it is estimated that the Au ion would induce a defected track with a diameter of 4 nm in SiO 2 . ARTICLE HISTORY

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Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics

Cited by 75 publications

References 24 publications

Heavy-ion-induced soft breakdown of thin gate oxides

Heavy-ion-induced soft breakdown of thin gate oxides

Magnetic Random Access Memory for Embedded Computing

Molecular dynamics study of structural damage in amorphous silica induced by swift heavy-ion radiation

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