Height-driven linear polarization of the surface emission from quantum dashes

Musiał, Anna; Podemski, P.; Sęk, G.; Kaczmarkiewicz, Piotr; Andrzejewski, J.; Machnikowski, Paweł; Misiewicz, J.; Hein, S.; Somers, A.; Höfling, Sven; Reithmaier, Johann Peter; Forchel, A.

doi:10.1088/0268-1242/27/10/105022

Cited by 17 publications

(16 citation statements)

References 43 publications

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“…But on the other hand, the QDashes are similar to the investigated In 0.3 Ga 0.7 As/GaAs QDs with respect to the lack of in-plane rotational symmetry and the resulting lh contribution to the excitonic states. Much higher DOP-in the range of 0.15 up to 0.3-was observed experimentally [34,46]. This can be traced back to a larger lh contribution to the valence band ground state, in the range of 3.2-5.1% for QDash structures.…”

Section: A Degree Of Linear Polarization Of the Surface Emissionmentioning

confidence: 71%

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots

et al. 2014

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In this paper we present a comprehensive and detailed analysis of carrier/exciton wave function extension in large low-strain In 0.3 Ga 0.7 As quantum dots (QDs). They exhibit rather shallow confinement potential with electron/hole localization energy below 30 meV and confinement strength substantially weakened in comparison to typical epitaxial quasi-zero-dimensional semiconductor nanostructures. The aim of this study is to investigate the influence of different factors on the wave function (probability density distribution) for carriers or excitons in this regime, i.e., object shape anisotropy as well as strain, piezoelectricity, and Coulomb interactions, and to identify the physical mechanisms determining the properties of optical emission. To probe the wave function symmetry, polarization-resolved photoluminescence has been performed, and the spatial extensions of the corresponding probability densities have been verified in magneto-optical measurements. The observed diamagnetic coefficients in the range of (15-31) μeV/T 2 reflect large in-plane QD size. These studies also enable us to investigate the importance of light hole states admixture to the valence band ground state in such nanostructures, which can be addressed via the degree of linear polarization of emission as well as the exciton g X factor. The linear-polarization-resolved measurements revealed an exceptionally low exciton fine structure splitting of 5 μeV on average as well as a low emission polarization degree of −0.05, with the polarization perpendicular to the QD elongation direction dominating. The increased light hole contribution to the lowest energy hole level is reflected in the decreased exciton g X factor (in the range of 0-1) and is consistent with the results of the eight-band k·p modelling. Based on the temperature dependence of the diamagnetic coefficient, the problem of individual QD uniformity has additionally been discussed. To evaluate the impact of the confinment potential and the structure geometry on the optical properties of the QDs, a comparison between the investigated dots and InAs/InGaAlAs/InP quantum dashes exhibiting a much deeper confining potential is presented.

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Section: A Degree Of Linear Polarization Of the Surface Emissionmentioning

confidence: 71%

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots

et al. 2014

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“…However, emission from the other edge (parallel to the Qdashes' longer lateral size) did not show any dependence of polarization on the dash height since the polarization was driven by the dashes longer lateral size rather than height [189]. A more detailed and systematic investigation of the Qdash height on the polarization of the surface emission was carried out by Musial et al [190] who showed through surface PL emission from these dashes was primarily driven by Qdash height due to heavy hole and light hole mixing.…”

Section: Qdashes On (100) Inp Substratementioning

confidence: 99%

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Khan

Ooi

2014

Progress in Quantum Electronics

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The advances in lasers, electronic and photonic integrated circuits (EPIC), optical interconnects as well as the modulation techniques allow the present day society to embrace the convenience of broadband, high speed internet and mobile network connectivity. However, the steep increase in energy demand and bandwidth requirement calls for further innovation in ultra-compact EPIC technologies. In the optical domain, innovation in the laser technologies beyond the current quantum well (Qwell) based laser technologies are already taking place and presenting very promising results. Homogeneously grown quantum dot (Qdot) lasers, can serve in the future energy saving information and communication technologies (ICT) as the work-horse for transmitting information through optical fiber. The encouraging results in the zero-dimensional (0D) structures emitting at 980 nm, in the form of vertical cavity surface emitting laser (VCSEL), are already operational at low threshold current density and capable of 40 Gbps error-free transmission at 108 fJ/bit. Eventual achievements for lasers operating in the O-, C-, L-, U-bands, and beyond will eventually lay the foundation for green ICT. On the hand, the inhomogeneously grown quasi 0D quantum dash (Qdash) lasers are brilliant solutions for potential broadband connectivity in server farms or access network. A single broadband Qdash laser operating in the stimulated emission mode can replace tens of discrete narrow-band lasers in dense wavelength division multiplexing (DWDM) transmission thereby further saving energy, cost and footprint. In this article, we review the progress of both Qdots and Qdash devices based on the InAs/InGaAlAs/InP and InAs/InGaAsP/InP material systems, from the angles of growth and device performance.2

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“…In the first case, we attribute the 25% DOLP to the intrinsic property of the emitter which is driven by the heavy-hole light-hole mixing in the valence band that influences the optical transition dipole moments and the respective polarization components due to strong confinement anisotropy [23]- [25]. In case of QDashes it is evidently related to the elongation [26], but also depends on the nanostructure cross-sectional size [27].…”

Section: Resultsmentioning

confidence: 96%

Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash

et al. 2016

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Height-driven linear polarization of the surface emission from quantum dashes

Cited by 17 publications

References 43 publications

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots

Toward weak confinement regime in epitaxial nanostructures: Interdependence of spatial character of quantum confinement and wave function extension in large and elongated quantum dots

Self-assembled InAs/InP quantum dots and quantum dashes: Material structures and devices

Effect of Dielectric Medium Anisotropy on the Polarization Degree of Emission from a Single Quantum Dash

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