2016
DOI: 10.1103/physrevb.94.161405
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Helicity-dependent photocurrent in a Bi2Se3 thin film probed by terahertz emission spectroscopy

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Cited by 43 publications
(42 citation statements)
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“…In the case of Bi 2 Se 3 , the carrier relaxation time in TSSs is ∼10 ps at 70 K [32], and the estimated frequency of the terahertz emissions from Bi 2 Se 3 would be ∼0.1 THz, which is close to the results (∼0.23 THz) of Ref. [38]. For Sb 2 Te 3 at room temperature, the carrier relaxation time in the TSSs is ∼1.2 ps from time-resolved ARPES results [22].…”
Section: Resultssupporting
confidence: 81%
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“…In the case of Bi 2 Se 3 , the carrier relaxation time in TSSs is ∼10 ps at 70 K [32], and the estimated frequency of the terahertz emissions from Bi 2 Se 3 would be ∼0.1 THz, which is close to the results (∼0.23 THz) of Ref. [38]. For Sb 2 Te 3 at room temperature, the carrier relaxation time in the TSSs is ∼1.2 ps from time-resolved ARPES results [22].…”
Section: Resultssupporting
confidence: 81%
“…Recently, some TI-terahertz-emission works based on circularly polarized excitation have been reported, and these works either use circular dichroism or single delay-time analysis [37,38]. Helicity-dependent terahertz emission measurements of Bi 2 Se 3 thin films have been demonstrated, and a threefold periodicity with a constant offset in azimuthal scan has been observed [38].…”
Section: Resultsmentioning
confidence: 99%
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“…For example, tuning the nonlinear response using external magnetic fields, strain or by combining graphene with other 2D materials will lead to new insights. Moving beyond graphene, similar effects have been already studied in topological insulators and applied for their characterization and considered theoretically for Weyl semimetals . They are also expected for boron nitride and transition metal dichalcogenieds.…”
Section: Discussionmentioning
confidence: 89%